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NESG2021M16-T3

Renesas Electronics

NESG2021M16-T3 by Renesas Electronics

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .175 W; Maximum Collector Current (IC): .035 A; Minimum DC Current Gain (hFE): 130; No. of Elements: 1;

Median Price

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Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Authorized Procurement Solutions

USA . 2,500 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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2,500

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Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) NESG2021M16-T3 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Renesas Electronics

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

130

No. of Elements:

1

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

BIP RF Small Signal

Surface Mount:

YES

Transistor Element Material:

SILICON GERMANIUM

Trade Compliance

NESG2021M16-T3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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