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NESG260234-T1-AZ

Renesas Electronics

NESG260234-T1-AZ by Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Maximum Collector Current (IC): .6 A; Package Style (Meter): SMALL OUTLINE;

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Vyrian

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680

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Inventory MP

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340

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Bristol Electronics

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340

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Nova Conductors

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50

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AZTECH Wire

Italy . 680 parts In-Stock

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680

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Component Stockers USA

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$99.990

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QUARKTWIN TECHNOLOGY LTD

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Argo Parts USA

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Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) NESG260234-T1-AZ attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Renesas Electronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

7.2 V

Configuration:

Minimum DC Current Gain (hFE):

80

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e6

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP RF Small Signal

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

NESG260234-T1-AZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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