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BF240ZL1

Onsemi

BF240ZL1 by Onsemi

BF240ZL1 by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 40V and fT of 600MHz. It is ideal for amplifier applications due to its low 0.025A collector current, 0.34pF capacitance, and silicon element material. The package style is cylindrical with a plastic/epoxy body and through-hole terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,551 parts In-Stock

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Vyrian

USA . 1,378 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 144 parts In-Stock

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$0.275

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$0.264

144

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$0.264

Northwest PG Solutions

USA . 399 parts In-Stock

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$0.303

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$0.267

399

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$0.267

TANS Electronics

Latvia . 5,981 parts In-Stock

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Problanco Electronics

Mexico . 4,938 parts In-Stock

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SupplyDigital Components

Austria . 4,125 parts In-Stock

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Kulean Microsystems

USA . 3,927 parts In-Stock

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UHIMA Technologies

Türkiye . 573 parts In-Stock

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Corphita

USA . 557 parts In-Stock

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Corohmni

South Africa . 280 parts In-Stock

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Overview

Unleash the power of superior performance with the BF240ZL1 by Onsemi. This RF Small Signal Bipolar Junction Transistor (BJT) boasts unparalleled quality and reliability, thanks to Onsemi's renowned expertise in semiconductor manufacturing. Ideal for amplifier applications, this NPN transistor offers exceptional value with its high collector-emitter voltage and low collector-base capacitance. Elevate your designs with the precision and efficiency of the BF240ZL1, setting new standards in performance and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and lightweight characteristics, making the transistor suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits due to their high input impedance and current amplification capabilities.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, reducing complexity and potential points of failure.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance and efficiency in signal amplification.

Package Shape: ROUND

Round package shape offers uniform distribution of heat and easy mounting, enhancing thermal management and installation convenience.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and reliable connections, particularly suitable for soldering and PCB mounting.

No. of Terminals: 3

Three terminals facilitate simplified circuit connections, allowing for straightforward integration into electronic circuits.

Maximum Collector-Base Capacitance: 0.34 pF

Low collector-base capacitance minimizes signal distortion and interference, ensuring high-frequency performance and signal integrity.

Maximum Collector-Emitter Voltage: 40 V

High collector-emitter voltage rating provides robustness and reliability in various operating conditions, offering protection against voltage spikes.

Transistor Element Material: SILICON

Silicon material offers high thermal conductivity and performance stability, ensuring long-term reliability and consistent transistor operation.

Maximum Collector Current (IC): 0.025 A

Low collector current enables efficient power consumption and heat dissipation, contributing to the overall energy efficiency of the transistor.

Terminal Finish: TIN LEAD

Tin lead terminal finish enhances solderability and corrosion resistance, ensuring durable and reliable connections for long-term performance.

Terminal Position: BOTTOM

Bottom terminal position simplifies PCB layout and installation, offering space-saving advantages and easy integration into compact electronic designs.

Nominal Transition Frequency (fT): 600 MHz

High nominal transition frequency enables fast switching speeds and high-frequency operation, making the transistor suitable for rapid signal processing and communication applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BF240ZL1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.34 pF

Maximum Collector-Emitter Voltage:

40 V

Configuration:

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BF240ZL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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