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MPSH17RL1

Onsemi

MPSH17RL1 by Onsemi

MPSH17RL1 by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 15V and fT of 800MHz. It is used in amplifier applications due to its very high frequency band capability. The package style is cylindrical with a plastic/epoxy body material and through-hole terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,810 parts In-Stock

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Vyrian

USA . 579 parts In-Stock

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Problanco Electronics

Mexico . 6,083 parts In-Stock

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Kulean Microsystems

USA . 6,029 parts In-Stock

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SupplyDigital Components

Austria . 3,453 parts In-Stock

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Corohmni

South Africa . 498 parts In-Stock

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Corphita

USA . 274 parts In-Stock

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TANS Electronics

Latvia . 221 parts In-Stock

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UHIMA Technologies

Türkiye . 101 parts In-Stock

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Overview

Discover the Onsemi MPSH17RL1, a high-quality RF Small Signal Bipolar Junction Transistor designed for amplifier applications in the very high-frequency band. With its NPN configuration and cylindrical package shape, this transistor offers exceptional performance and reliability. Manufactured by Onsemi, a trusted leader in semiconductor technology, the MPSH17RL1 provides customers with outstanding value, benefits, and advantages. Explore the possibilities of this versatile component and elevate your electronic designs to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and provides insulation for the transistor, making it suitable for various applications and environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and allows for easy integration into amplifier circuits.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification tasks.

Package Shape: ROUND

Round package shape provides ease of mounting and allows for efficient heat dissipation.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer secure connections and are well-suited for manual or automated soldering processes.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Operates in the very high-frequency band, making it suitable for high-speed applications requiring fast signal processing.

No. of Terminals: 3

Three terminals provide the necessary connections for biasing and signal input/output, allowing for efficient transistor operation.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers compact design and facilitates easy handling and installation.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand higher temperatures, ensuring stability during operation.

Maximum Collector-Base Capacitance: 0.9 pF

Low collector-base capacitance minimizes signal distortion and improves high-frequency performance.

Maximum Collector-Emitter Voltage: 15 V

Can handle up to 15 volts of collector-emitter voltage, making it suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon material offers high performance, reliability, and efficiency in transistor operation.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures reliable solder joints and enhances conductivity for optimal electrical performance.

Terminal Position: BOTTOM

Bottom terminal position simplifies PCB layout and facilitates efficient heat dissipation.

Nominal Transition Frequency (fT): 800 MHz

High transition frequency of 800 MHz enables fast switching speeds and high-frequency operation, ideal for amplifier applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MPSH17RL1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector-Base Capacitance:

.9 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSH17RL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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