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2N3570

Asi Semiconductor

2N3570 by Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A; Terminal Position: BOTTOM;

Median Price

$7.661

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

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American Microsemiconductor Inc.

USA . 4 parts In-Stock

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$5.690

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Bristol Electronics

USA . 1,067 parts In-Stock

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$9.632

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$4.173

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$3.949

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Digiode

USA . 7,153 parts In-Stock

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Vyrian

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ComSIT Distribution GmbH

Germany . 3,124 parts In-Stock

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Anansix

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ECAB

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MISTER SPROCKETS

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Microfarads

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ACDS - Activité Composants Distribution Service

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Electronic Expediters

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LittleDiode

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Pride Electronics

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Native Components

USA . 734 parts In-Stock

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$0.475

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$0.456

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$0.475

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$0.456

Northwest PG Solutions

USA . 2,741 parts In-Stock

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$0.522

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$0.460

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$0.522

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IDEA Electronic Components Group

UK . 970 parts In-Stock

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$0.659

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$0.593

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ChromeModa Solutions

Germany . 5,199 parts In-Stock

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$0.709

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DigiPath Technology Company

USA . 1,379 parts In-Stock

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MKK Technologies

India . 390 parts In-Stock

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One Stop Electronics

USA . 1,265 parts In-Stock

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AZTECH Wire

Italy . 567 parts In-Stock

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$13.781

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Corphita

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Parana Technologies

USA . 4,321 parts In-Stock

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Assy Fe

Spain . 1 parts In-Stock

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Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) 2N3570 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Asi Semiconductor

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.75 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

20

Highest Frequency Band:

L BAND

JEDEC-95 Code:

TO-72

JESD-30 Code:

O-MBCY-W4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2N3570 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-421-4728, 5961004214728, 5961-14-323-8378, 5961143238378, 5961-99-118-9768, 5961991189768, 5961-99-197-6040, 5961991976040

NIIN

004214728, 143238378, 991189768, 991976040

Manufacturer Highlights

Asi Semiconductor

ASI Semiconductor, Inc. (ASI) designs, supplies and markets state-of-the-art high power, pulsed RF transistors and pallets. We proudly serve thousands of customers in dozens of countries, specifically focusing on pulsed RF commercial applications for avionics, radar, medical and industrial applications. We are introducing VIMOS technology to meet the needs and requirements of this unique marketplace. We have supported this industry for over 30 years which has included several governments and Fortune 500 customers. ASI was founded in 1979 and is ISO 9001 certified. Our headquarters is located in North Hollywood, CA, USA.

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