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BFG425W

NXP Semiconductors

BFG425W by NXP Semiconductors

NXP Semiconductors' BFG425W is a NPN RF BJT transistor with 4 terminals, ideal for L Band applications. It has a max power dissipation of 0.135 W, hFE of 50, and fT of 25 GHz. The package is small outline with gull wing terminals and can handle up to 4.5 V collector-emitter voltage.

Median Price

$0.181

Lifecycle Status

Suppliers In-Stock

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DigiKey

USA . 1,763 parts In-Stock

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Freelance Electronics

USA . 518 parts In-Stock

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Digiode

USA . 841 parts In-Stock

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Component Electronics Inc.

Canada . 933 parts In-Stock

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J2 Sourcing AB

Sweden . 69,460 parts In-Stock

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Partservice

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Micros sp.j. W. Kędra i J. Lic

Poland . 2,980 parts In-Stock

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Vyrian

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LIBRA Elektronik GmbH

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ACDS - Activité Composants Distribution Service

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Nova Conductors

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Fibra_Brandt Electronic GMBH

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Ampacity Inc.

Singapore . 2,731 parts In-Stock

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Corphita

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Aztec Data Supply Inc.

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Metaverse IC Inc.

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Continental Prestige Electronics

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Overview

Unlock the potential of RF applications with the BFG425W by NXP Semiconductors. Known for their top-notch quality, NXP Semiconductors delivers a high-performance solution for your switching needs. The BFG425W is a game-changer in the realm of RF Small Signal Bipolar Junction Transistors, offering reliability and efficiency in a compact package. Whether you're in the L BAND or require a transistor for various switching applications, this NPN transistor with a small outline package is your go-to choice. Experience seamless connectivity and superior performance with the BFG425W.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering good performance.

Configuration: SINGLE

Simplified design with a single transistor configuration for ease of use.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing reliable performance in such scenarios.

Surface Mount: YES

Allows for easy and compact integration onto circuit boards, saving space.

Maximum Power Dissipation (Abs): 0.135 W

Can handle power dissipation levels up to 0.135 W, ensuring reliable operation under varying conditions.

Maximum Collector-Emitter Voltage: 4.5 V

The high collector-emitter voltage rating allows for versatility in different circuit configurations.

Nominal Transition Frequency (fT): 25000 MHz

High transition frequency enables fast switching speeds and high-frequency operation.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFG425W attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE

Case Connection:

EMITTER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

4.5 V

Configuration:

Minimum DC Current Gain (hFE):

50

Highest Frequency Band:

L BAND

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.135 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFG425W Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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