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MPSH11RLRE

Onsemi

MPSH11RLRE by Onsemi

MPSH11RLRE by Onsemi is an NPN RF BJT with a max collector-emitter voltage of 25V and fT of 650MHz. It is used in ultra-high frequency applications due to its low capacitance (0.7pF) and high operating temperature (150 °C). The transistor's through-hole package makes it suitable for various cylindrical-shaped devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,886 parts In-Stock

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Digiode

USA . 293 parts In-Stock

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Problanco Electronics

Mexico . 7,731 parts In-Stock

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TANS Electronics

Latvia . 4,861 parts In-Stock

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Kulean Microsystems

USA . 4,204 parts In-Stock

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SupplyDigital Components

Austria . 2,485 parts In-Stock

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Corphita

USA . 1,568 parts In-Stock

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UHIMA Technologies

Türkiye . 849 parts In-Stock

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Corohmni

South Africa . 144 parts In-Stock

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Overview

Unlock the power of ultra-high frequency bands with the MPSH11RLRE by Onsemi. Crafted with precision and expertise, this RF Small Signal Bipolar Junction Transistor offers unparalleled performance and reliability. From amplifiers to oscillators, this NPN transistor is perfect for a wide range of applications. Experience the quality and value that Onsemi brings to every product, giving you the advantage in your projects. Trust in the MPSH11RLRE to deliver exceptional results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material ensures durability and protection for the transistor, making it suitable for various applications in different environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product versatile for audio and signal processing applications.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easy to incorporate this transistor into different electronic devices.

Package Shape: ROUND

The round package shape allows for efficient placement and mounting on circuit boards, optimizing space utilization and overall design aesthetics.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides a secure and reliable connection to the circuit board, ensuring stability during operation and ease of soldering.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

The ultra-high frequency band capability enables this transistor to handle high-speed signal processing, making it suitable for advanced communication and RF applications.

No. of Terminals: 3

With 3 terminals, this transistor offers flexible integration into various circuit configurations, allowing for customization and optimization based on specific requirements.

Package Style (Meter): CYLINDRICAL

The cylindrical package style provides a compact and space-efficient design, making it ideal for portable electronic devices and applications with limited space constraints.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C ensures reliability and stability under harsh environmental conditions, making this transistor suitable for industrial and automotive applications.

Maximum Collector-Base Capacitance: 0.7 pF

The low maximum collector-base capacitance helps to minimize unwanted signal distortion and interference, ensuring high performance and accuracy in signal processing applications.

Maximum Collector-Emitter Voltage: 25 V

The maximum collector-emitter voltage of 25 volts allows for safe operation within specified voltage limits, protecting the transistor from damage and ensuring long-term reliability.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures high efficiency, low noise, and good thermal conductivity, making this product a reliable choice for various electronic applications.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides good solderability and conductivity, facilitating easy and reliable connections during assembly and installation processes.

Terminal Position: BOTTOM

The bottom terminal position allows for easy access and connection to the circuit board, simplifying the installation process and ensuring secure placement within the electronic device.

Nominal Transition Frequency (fT): 650 MHz

The high nominal transition frequency of 650 megahertz indicates the fast response time and high-speed performance of this transistor, making it suitable for demanding RF applications that require quick signal processing.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MPSH11RLRE attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector-Base Capacitance:

.7 pF

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSH11RLRE Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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