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2N5090

Onsemi

2N5090 by Onsemi

The Onsemi 2N5090 is an NPN RF BJT with a max. collector-emitter voltage of 30V and max. collector current of 0.4A, ideal for ultra-high frequency band applications. Featuring a silicon transistor element, it has a nominal transition frequency of 500MHz, making it suitable for high-frequency signal amplification in RF circuits. The package style is post/stud mount with a round shape and isolated case connection.

Median Price

$23.934

Lifecycle Status

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Ace Electronics

USA . 2 parts In-Stock

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$11.000

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Freelance Electronics

USA . 151 parts In-Stock

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$23.934

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$25.131

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$23.695

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Forefront Electronics and Design

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Digiode

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Anansix

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ECAB

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Electro Mavin

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Mil-Aero Solutions, Inc.

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ACDS - Activité Composants Distribution Service

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DF Sales Co.

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MISTER SPROCKETS

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Native Components

USA . 200 parts In-Stock

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$0.372

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$0.357

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Northwest PG Solutions

USA . 4,422 parts In-Stock

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$0.648

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IDEA Electronic Components Group

UK . 684 parts In-Stock

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MKK Technologies

India . 332 parts In-Stock

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DigiPath Technology Company

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Corohmni

South Africa . 163 parts In-Stock

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Microchip USA

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TANS Electronics

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Parana Technologies

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Problanco Electronics

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Overview

Unlock the potential of your RF Small Signal applications with the 2N5090 by Onsemi. Known for their high-quality manufacturing, Onsemi delivers top-of-the-line products that are reliable and efficient. The 2N5090 is a versatile NPN transistor that offers ultra-high frequency capabilities, making it ideal for a wide range of electronic projects. With a maximum collector-emitter voltage of 30V and a transition frequency of 500 MHz, this transistor provides exceptional performance and value. Elevate your designs with the 2N5090 and experience superior results like never before.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides good mechanical strength and heat dissipation, ensuring reliability and durability in various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for a wide range of applications.

Configuration: SINGLE

Single configuration simplifies circuit design and implementation, making it easier to integrate into electronic systems.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Operating in the ultra-high frequency band allows for fast signal processing and high-speed performance, ideal for applications with demanding frequency requirements.

Maximum Collector-Emitter Voltage: 30 V

The maximum voltage rating of 30V provides a safety margin for applications that require higher voltage handling capabilities.

Maximum Collector Current (IC): 0.4 A

With a maximum collector current of 0.4A, this transistor can handle moderate power levels effectively, suitable for many general-purpose electronic circuits.

Nominal Transition Frequency (fT): 500 MHz

The high transition frequency of 500MHz allows for efficient signal amplification and high-frequency performance, making it suitable for RF applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) 2N5090 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-60

JESD-30 Code:

O-MUPM-P3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

PIN/PEG

Terminal Position:

UPPER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5090 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-469-5785, 5961004695785, 5961-00-124-4970, 5961001244970, 5961-01-250-3389, 5961012503389, 5961-01-027-5743, 5961010275743, 5961-99-196-8672, 5961991968672, 5961-14-370-3462, 5961143703462

NIIN

004695785, 001244970, 012503389, 010275743, 991968672, 143703462

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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