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CA3046

Renesas Electronics

CA3046 by Renesas Electronics

CA3046 by Renesas Electronics is a NPN BJT with 5 elements and 14 terminals. It operates in the very high frequency band at 550 MHz, ideal for amplifier applications. The transistor has a max collector-emitter voltage of 15V and collector current of 0.05A, housed in a rectangular plastic/epoxy package with through-hole terminals.

Median Price

$59.380

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Rochester

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Forefront Electronics and Design

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Component Electronics Inc.

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TEDSS.com

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American Microsemiconductor Inc.

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Microchip USA

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Kepictronics

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Overview

Unleash the power of Renesas Electronics with the CA3046 RF Small Signal Bipolar Junction Transistors (BJT). This complex transistor offers unparalleled quality and reliability, perfect for amplifier applications in the very high-frequency band. With 5 elements and 14 terminals, this NPN transistor provides exceptional performance and versatility. Upgrade your electronics project with the CA3046 and experience the superior value and benefits that only Renesas Electronics can deliver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications in potentially harsh environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: COMPLEX

The complex configuration allows for versatile use in diverse circuit designs, offering flexibility in application.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification tasks.

Package Shape: RECTANGULAR

The rectangular shape of the package makes it easy to mount and integrate into various electronic devices or circuits.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides secure connections, aiding in reliable performance and ease of installation.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Suitable for high-frequency applications, ensuring efficient signal processing and transmission in very high-frequency bands.

No. of Elements: 5

Having multiple elements allows for more complex circuit designs and functionality, enhancing the versatility of the transistor.

No. of Terminals: 14

With 14 terminals, this transistor can facilitate intricate connections and configurations in electronic circuits.

Package Style (Meter): IN-LINE

The in-line package style offers compactness and space efficiency, suitable for applications with limited space constraints.

Maximum Collector-Emitter Voltage: 15 V

With a maximum collector-emitter voltage of 15 V, this transistor can handle higher voltage levels, expanding its potential applications.

Transistor Element Material: SILICON

Silicon is a common material for transistor elements, known for its reliability and consistent performance in electronic circuits.

Maximum Collector Current (IC): 0.05 A

The maximum collector current of 0.05 A ensures efficient current handling capacity, suitable for various amplification tasks and applications.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead terminal finish provides corrosion resistance and reliable solder connections, enhancing the longevity of the transistor.

Terminal Position: DUAL

Having dual terminal positions allows for flexibility in circuit design and connection options, enabling customized configurations.

Nominal Transition Frequency (fT): 550 MHz

The high nominal transition frequency of 550 MHz indicates fast signal processing capabilities, suitable for high-speed electronic applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) CA3046 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Renesas Electronics

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

MS-001AA

JESD-30 Code:

R-PDIP-T14

JESD-609 Code:

e0

No. of Elements:

5

No. of Terminals:

14

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

CA3046 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5840-00-753-2527, 5840007532527, 5962-00-412-1023, 5962004121023

NIIN

007532527, 004121023

Manufacturer Highlights

Renesas Electronics

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