Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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The Onsemi MPSH17 is an NPN RF BJT transistor with a max fT of 800 MHz. It has a max Vce of 15V and Pdiss of 0.625W, ideal for amplifier applications in the very high frequency band. The package is cylindrical with through-hole terminals, making it suitable for various electronic designs.
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Plastic/Epoxy material provides good insulation and durability, making the transistor suitable for various environmental conditions.
NPN type transistor is commonly used in amplifier circuits, offering good performance in signal amplification.
With a maximum operating temperature of 150 °C, this transistor can handle higher temperatures without compromising its performance.
The high nominal transition frequency of 800 MHz indicates that this transistor can operate efficiently at high frequencies, making it suitable for amplifier applications.
The maximum collector-emitter voltage of 15V allows for a wide range of voltage applications while maintaining stability.
RF Small Signal Bipolar Junction Transistors (BJT) MPSH17 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi
Maximum Collector-Base Capacitance:
Maximum Collector-Emitter Voltage:
Configuration:
Minimum DC Current Gain (hFE):
Highest Frequency Band:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
Nominal Transition Frequency (fT):
MPSH17 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
NSN
5961-01-052-3893, 5961010523893
NIIN
010523893
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
2N7002
Lite-on Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Additional Features: LOW THRESHOLD; Minimum DS Breakdown Voltage: 60 V;
BAV99
Vishay Telefunken
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Vishay Intertechnology
Vishay Intertechnology's BAV99 diode features a max forward voltage of 1.3V and a max output current of 0.15A, making it ideal for rectification applications. With a small outline package style and dual terminal position, this series-connected diode is designed for surface mount usage in various electronic circuits with an operating temperature range from -55°C to 150°C.
1N4148
Formosa Microsemi
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LM107H
Linear Technology
LM107H by Linear Technology is an Operational Amplifier with a max input offset voltage of 3000uV, common mode reject ratio of 96dB, and min voltage gain of 50000. It is used in military applications due to its MILITARY temperature grade and BIPOLAR technology for precise signal processing in harsh environments.
2N2222A
M/a-com Technology Solutions
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Terminal Position: BOTTOM; Package Style (Meter): CYLINDRICAL;
Zetex Plc
SS14
Changzhou Galaxy Century Microelectronics
RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Non Repetitive Peak Forward Current: 40 A; Technology: SCHOTTKY; No. of Elements: 1;
Silicon Standard
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .225 W; Maximum Drain-Source On Resistance: 7.5 ohm; Transistor Element Material: SILICON;
LM7805CT/NOPB
Texas Instruments
LM7805CT/NOPB by Texas Instruments is a fixed positive single output standard regulator with an output voltage of 5V and max current of 1.5A. It operates b/w 0-125°C, has a package style of flange mount, and offers low line/load regulation making it ideal for various electronic applications requiring stable power supply.
LL4148
Bytesonic Electronics
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Bkc Semiconductors
LM78L05ACMX/NOPB
LM78L05ACMX/NOPB by Texas Instruments is a fixed positive single output standard regulator with an output voltage of 5V and max current of 0.1A. It operates b/w 0-125°C, has a dropout voltage of 1.6V, and can handle input voltages up to 30V making it ideal for various electronic applications requiring stable power supply.
TCA6424ARGJR
TCA6424ARGJR by Texas Instruments is a CMOS parallel I/O port with 24 bits and 3 ports. It operates b/w -40 to 85°C, suitable for industrial applications. With a max clock frequency of 0.4 MHz, it offers low power consumption at only 0.03 mA supply current.
BSS138NH6327XTSA2
Infineon Technologies
BSS138NH6327XTSA2 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for small signal applications. Operating in Enhancement Mode, it has 0.36W Power Dissipation and 3.5 ohm Drain-Source Resistance. With Gull Wing terminals and AEC-Q101 reference standard, it's suitable for automotive electronics due to its high temperature range of -55 to 150 °C.
DS18B20Z/T&R
Maxim Integrated
DS18B20Z/T&R by Maxim Integrated is a 12-bit digital temperature sensor with a max supply voltage of 5.5V and an accuracy of 0.50°C. It features a 1-Wire interface, operates b/w -55°C to 125°C, and is ideal for applications requiring precise temperature monitoring in compact spaces.
Meritek Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
ISO1050DUBR
ISO1050DUBR by Texas Instruments is a network interface IC with 8 terminals, operating from -55 to 105°C. It features a small outline package, nickel palladium gold finish, and gull wing terminal form. Ideal for telecom applications requiring a 5V supply voltage and peak reflow temperature of 260°C.
SZNUP2105LT1G
Onsemi
SZNUP2105LT1G by Onsemi is a Transient Suppression Device with 2 elements in a common anode configuration. It has a max non-repetitive peak reverse power dissipation of 350W and breakdown voltage of 29.1V. Ideal for applications requiring bidirectional polarity protection, such as automotive electronics and industrial equipment due to its AEC-Q101 compliance and high clamping voltage of 44V.
General Semiconductor
MCH4017
The Onsemi MCH4017 is an NPN RF BJT with a max. power dissipation of 0.45W, suitable for UHF applications. With a min. DC current gain of 60 and max. collector-emitter voltage of 12V, it operates at up to 150 °C, making it ideal for high-frequency circuits in small outline packages.
50A02CH-TL-E
RF Small Signal Bipolar Transistors; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e6; Terminal Finish: TIN BISMUTH;
3001
Advanced Power Technology
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .2 A; No. of Elements: 1; Highest Frequency Band: S BAND;
NSVF3007SG3T1G
NSVF3007SG3T1G by Onsemi is an NPN BJT transistor with 3 terminals, ideal for amplifier applications in the ultra-high frequency band. It has a max power dissipation of 0.35W, hFE of 60, and fT of 8000MHz. Suitable for surface mount design with a max operating temp of 150 °C.
BFR99
STMicroelectronics
BFR99 by STMicroelectronics is a PNP RF small signal BJT designed for amplifier applications. It features a max power dissipation of 0.225 W, operates up to 2000 MHz, and withstands temperatures up to 175 °C. Its cylindrical metal package ensures durability in ultra-high frequency settings.
MMBT918
MMBT918 by Onsemi is a NPN RF BJT transistor with a max fT of 600 MHz. It has a max IC of 0.05 A and hFE of 20, ideal for amplifier applications in the VHF band. This small outline package with gull wing terminals operates up to 150 °C, making it suitable for high-frequency amplification needs.
BFR183E6327HTSA1
BFR183E6327HTSA1 by Infineon Technologies is an NPN RF Small Signal BJT transistor with a max collector-emitter voltage of 12V and a nominal transition frequency of 8000MHz. It is designed for ultra-high frequency band applications such as amplifiers, featuring a small outline package style and Gull Wing terminal form for surface mount assembly.
934063143215
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .018 A; Package Style (Meter): SMALL OUTLINE;
CA3083M
Rochester Electronics
NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 450 MHz; Maximum Collector Current (IC): .1 A; JESD-609 Code: e0;
934063147215
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 10 V;
MPSH10RLRE
MPSH10RLRE by Onsemi is an NPN RF BJT with a max collector-emitter voltage of 25V and fT of 650MHz. It is used in ultra-high frequency applications due to its low capacitance (0.7pF) and high temp rating (150 °C). The transistor's through-hole package makes it suitable for various cylindrical style designs.
KSC1730Y
KSC1730Y by Onsemi is an NPN RF BJT with a max VCEsat of 0.5V, hFE of 120, and fT of 1100MHz. Ideal for amplifier applications in the UHF band due to its high transition frequency and low collector-emitter voltage. Package style is cylindrical with through-hole terminals, making it suitable for various electronic designs.
MPSH10
The Onsemi MPSH10 is an NPN RF BJT transistor with a max fT of 650 MHz, ideal for amplifier applications. With a max IC of 0.1A and hFE of 60, it operates at up to 150°C. Its package style is cylindrical with through-hole terminals, making it suitable for ultra-high frequency band circuits.
2N918
2N918 by Texas Instruments is an NPN RF BJT transistor with a max collector-emitter voltage of 15V and max power dissipation of 0.2W. Ideal for ultra high frequency band applications, such as amplifiers, it has a min DC current gain of 20 and operates up to 200°C.
KST10MTF
KST10MTF by Onsemi is an NPN RF BJT with a max power dissipation of 0.35W and fT of 650MHz. Ideal for UHF applications, it has a max VCE of 25V and hFE of 60, making it suitable for high-frequency amplification in compact designs. With a small outline package and gull wing terminals, it offers efficient surface-mount integration.
BFU710F,115
RF Small Signal Bipolar Transistors; Terminal Finish: TIN; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;
MPSH17RLRP
MPSH17RLRP by Onsemi is a NPN RF BJT transistor with 3 terminals. It operates in the very high frequency band up to 800 MHz, making it suitable for amplifier applications. With a max collector-emitter voltage of 15V and low capacitance of 0.9 pF, it is ideal for high-frequency circuit designs.
934067704235
RF Small Signal Bipolar Transistors; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: TIN; Peak Reflow Temperature (C): 260;
MPSH11RL1
MPSH11RL1 by Onsemi is an NPN RF BJT with 3 terminals, operating at a max temp of 150 °C. It has a fT of 650 MHz and Vce(max) of 25V, suitable for ultra-high frequency applications due to its low collector-base capacitance of 0.7 pF.
BLF871,112
Ampleon Netherlands B V
RF Small Signal Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
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Semiconductor Technology
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .04 A;
Diodes Incorporated
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Collector Current (IC): .025 A; Qualification: Not Qualified;
National Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .05 A;
Motorola
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: THROUGH-HOLE;
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .025 A;
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Collector Current (IC): .04 A; Transistor Application: SWITCHING;
International Devices
Continental Device India
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .1 A;
Micro Electronics
Fairchild Semiconductor
Crimson Semiconductor
Central Semiconductor
Samsung
MPSH10RLRAG
MPSH10G
MPSH10RLRA
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON;
MPSH10RLRPG
MPSH10RL1
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Transistor Element Material: SILICON; Package Style (Meter): CYLINDRICAL;
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