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CA3086

Renesas Electronics

CA3086 by Renesas Electronics

CA3086 by Renesas Electronics is a NPN BJT with 6 elements and 14 terminals. It operates in the very high frequency band up to 550MHz, ideal for amplifier applications. With a max collector-emitter voltage of 15V and operating temperature range from -55°C to 125°C, it offers reliable performance in various electronic systems.

Median Price

$10.265

Lifecycle Status

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Component Electronics Inc.

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Pegasus Components GmbH

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Digital Electronic Gebert Verwaltungs UG

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Corohmni

South Africa . 633 parts In-Stock

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AZTECH Wire

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Overview

Enhance your RF small signal amplifier designs with the high-quality CA3086 by Renesas Electronics. Renowned for their expertise in semiconductor manufacturing, Renesas Electronics delivers a complex NPN configuration that excels in very high-frequency band applications. With 6 elements and 14 terminals, this rectangular package offers unparalleled performance and reliability. From amateur radio enthusiasts to professional circuit designers, the CA3086 provides exceptional value and benefits, making it the go-to choice for all your amplifier needs. Experience the difference with Renesas Electronics CA3086.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-term performance and reliability.

Polarity or Channel Type: NPN

Suitable for use in a wide range of electronic circuits due to its NPN configuration.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring efficient signal amplification.

Maximum Operating Temperature: 125 °C

Can operate in high-temperature environments without compromising performance.

Maximum Collector-Emitter Voltage: 15 V

Ideal for applications where a maximum collector-emitter voltage of 15V is required.

Maximum Collector Current (IC): 0.05 A

Capable of handling collector currents up to 0.05A, making it suitable for low-power applications.

Nominal Transition Frequency (fT): 550 MHz

High transition frequency allows for fast switching speeds, making it ideal for high-frequency applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) CA3086 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Renesas Electronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

MS-001AA

JESD-30 Code:

R-PDIP-T14

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

6

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

CA3086 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5962-00-540-9180, 5962005409180

NIIN

005409180

Manufacturer Highlights

Renesas Electronics

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