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BFP740FESDH6327XTSA1

Infineon Technologies

BFP740FESDH6327XTSA1 by Infineon Technologies

BFP740FESDH6327XTSA1 by Infineon Technologies is an NPN RF BJT with 14 dB power gain, ideal for X Band applications. It features a max operating temperature of 150°C, fT of 47 GHz, and a collector-emitter voltage of 4.2V. Suitable for amplifier circuits requiring high frequency performance in small outline packages.

Median Price

$0.372

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,106 parts In-Stock

1+ parts

$0.430

100+ parts

$0.233

1k+ parts

$0.197

10k+ parts

$0.173

3,106

$0.430

$0.233

$0.197

$0.173

Farnell

UK . 2 parts In-Stock

1+ parts

$0.653

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$0.653

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Adafruit Industries

USA . 40 parts In-Stock

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$1.010

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$0.919

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$0.828

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40

$1.010

$0.919

$0.828

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Verical

USA . 134,660 parts In-Stock

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$0.203

134,660

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$0.203

RS (Exports)

UK . 9,000 parts In-Stock

1+ parts

-

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$0.474

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$0.332

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$0.213

9,000

-

$0.474

$0.332

$0.213

Chip1Stop

Japan . 8,796 parts In-Stock

1+ parts

-

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$0.187

1k+ parts

$0.148

10k+ parts

$0.134

8,796

-

$0.187

$0.148

$0.134

Arrow

USA . 3,000 parts In-Stock

1+ parts

-

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$0.172

3,000

-

-

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$0.172

Element14

Singapore . 2 parts In-Stock

1+ parts

-

100+ parts

$0.314

1k+ parts

$0.270

10k+ parts

$0.248

2

-

$0.314

$0.270

$0.248

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 466 parts In-Stock

1+ parts

$0.170

100+ parts

-

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466

$0.170

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Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$0.236

100+ parts

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500

$0.236

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Maritex

Poland . 6,000 parts In-Stock

1+ parts

$0.254

100+ parts

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6,000

$0.254

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Rutronik

Germany . 69,000 parts In-Stock

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Vyrian

USA . 28,032 parts In-Stock

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Chip Stock

USA . 14,621 parts In-Stock

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VNN

France . 1,602 parts In-Stock

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ComSIT Distribution GmbH

Germany . 1,254 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 27,515 parts In-Stock

1+ parts

$0.146

100+ parts

$0.142

1k+ parts

$0.142

10k+ parts

-

27,515

$0.146

$0.142

$0.142

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Corphita

USA . 504 parts In-Stock

1+ parts

$0.161

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504

$0.161

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Argo Parts USA

USA . 4,395 parts In-Stock

1+ parts

$0.236

100+ parts

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$0.229

4,395

$0.236

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$0.229

Continental Prestige Electronics

USA . 3,899 parts In-Stock

1+ parts

$0.236

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$0.231

3,899

$0.236

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$0.231

Ampacity Inc.

Singapore . 27,638 parts In-Stock

1+ parts

$0.316

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27,638

$0.316

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Modulus Dynamics

Lithuania . 9,621 parts In-Stock

1+ parts

$0.450

100+ parts

$0.432

1k+ parts

$0.414

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9,621

$0.450

$0.432

$0.414

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Advanced Electronics

New Zealand . 40 parts In-Stock

1+ parts

$1.010

100+ parts

$0.919

1k+ parts

$0.828

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40

$1.010

$0.919

$0.828

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Aztec Data Supply Inc.

USA . 4,321 parts In-Stock

1+ parts

$1.637

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$1.637

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Corohmni

South Africa . 363 parts In-Stock

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$1.714

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363

$1.714

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Andel Nordic

Denmark . 261 parts In-Stock

1+ parts

$41.530

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$29.070

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$29.070

261

$41.530

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$29.070

GreenTree Electronics

Israel . 87,000 parts In-Stock

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Infinite Electronics LLP (Excess)

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Perfect Parts

USA . 13,339 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 8,475 parts In-Stock

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8,475

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Robosynatics

Brazil . 500 parts In-Stock

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$0.010

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$0.010

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$0.010

500

-

$0.010

$0.010

$0.010

Lucentia Tech

USA . 500 parts In-Stock

1+ parts

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100+ parts

$0.010

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$0.010

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$0.010

500

-

$0.010

$0.010

$0.010

Overview

Elevate your RF amplifier performance with the BFP740FESDH6327XTSA1 by Infineon Technologies. Crafted with precision by a renowned manufacturer, this NPN transistor offers exceptional power gain, high operating temperature range, and a wide frequency band for X Band applications. With a compact package style, flat terminals, and reliable construction using silicon germanium carbon, this transistor delivers superior quality and reliability. Experience seamless integration and amplified results with the BFP740FESDH6327XTSA1 - the perfect solution for your RF small signal BJT needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection for the transistor and ensures durability and reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for amplifier applications.

Minimum Power Gain (Gp): 14 dB

The minimum power gain of 14 dB indicates good amplification capabilities of the transistor.

Surface Mount: YES

Surface mount capability allows for easy and efficient integration into circuit boards.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand demanding operating conditions.

Nominal Transition Frequency (fT): 47000 MHz

The high transition frequency indicates the transistor's ability to operate at high frequencies, making it suitable for X band applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFP740FESDH6327XTSA1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.08 pF

Maximum Collector-Emitter Voltage:

4.2 V

Configuration:

Minimum DC Current Gain (hFE):

160

Highest Frequency Band:

X BAND

JESD-30 Code:

R-PDSO-F4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

14 dB

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON GERMANIUM CARBON

Nominal Transition Frequency (fT):

Trade Compliance

BFP740FESDH6327XTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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