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2N4429

STMicroelectronics

2N4429 by STMicroelectronics

2N4429 by STMicroelectronics is an NPN RF BJT designed for amplifier applications, featuring a max power dissipation of 5W and a nominal transition frequency of 700 MHz. It operates in the ultra-high frequency band with a max temp of 200 °C. Its flat, round package ensures efficient mounting.

Median Price

$42.000

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

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DF Sales Co.

USA . 2 parts In-Stock

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$42.000

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DF Sales Co.

USA . 2 parts In-Stock

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$42.000

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$42.000

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American Microsemiconductor Inc.

USA . 29 parts In-Stock

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$829.270

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Digiode

USA . 4,547 parts In-Stock

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Vyrian

USA . 1,040 parts In-Stock

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Anansix

USA . 639 parts In-Stock

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Manoshevitz Elec. Sales

Israel . 23 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 7 parts In-Stock

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ComSIT Distribution GmbH

Germany . 6 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 5 parts In-Stock

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LWI Electronics Inc

India . 5 parts In-Stock

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R&J Components

USA . 3 parts In-Stock

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MISTER SPROCKETS

USA . 3 parts In-Stock

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LittleDiode

UK . 2 parts In-Stock

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ECAB

Sweden . 2 parts In-Stock

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Sunrise Surplus Inc.

USA . 1 parts In-Stock

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EMSNET

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IDEA Electronic Components Group

UK . 507 parts In-Stock

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$0.871

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$0.784

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507

$0.871

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$0.784

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MKK Technologies

India . 1,462 parts In-Stock

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$1.638

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DigiPath Technology Company

USA . 1,462 parts In-Stock

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$1.638

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$1.638

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Native Components

USA . 745 parts In-Stock

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$7.623

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$7.623

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Corphita

USA . 1,950 parts In-Stock

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Northwest PG Solutions

USA . 1,460 parts In-Stock

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$7.471

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Parana Technologies

USA . 1,439 parts In-Stock

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$1.042

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Assy Fe

Spain . 26 parts In-Stock

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RTC Component Inc.

USA . 4 parts In-Stock

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Overview

Unlock exceptional performance with the 2N4429 from STMicroelectronics, a trusted leader in semiconductor innovation. Designed for ultra-high frequency applications, this NPN bipolar junction transistor excels as an amplifier, ensuring superior signal integrity and reliability. Its robust construction and high power dissipation capabilities make it ideal for demanding environments. Elevate your projects with this versatile component, delivering unmatched value and quality directly from an industry pioneer.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification applications, making this transistor suitable for a variety of signal processing tasks.

Configuration: SINGLE

The single configuration allows for simpler circuit designs, making it easier to integrate into various applications.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this transistor can enhance weak signals, ideal for RF applications.

Package Shape: ROUND

The round shape contributes to efficient heat dissipation, which is essential for maintaining performance under higher power conditions.

Terminal Form: FLAT

Flat terminals facilitate easier and more reliable mounting on PCB, ensuring good connectivity in designs.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Suitable for ultra high frequency applications, this transistor can handle signals in the GHz range, essential for modern communication systems.

No. of Terminals: 4

With four terminals, this transistor allows for more flexibility in circuit design and can provide complex configurations.

Maximum Power Dissipation (Abs): 5 W

A maximum power dissipation of 5 Watts indicates good handling capacity, suitable for amplifying larger signal levels without overheating.

Package Style (Meter): POST/STUD MOUNT

This mounting style ensures secure placement and can provide better thermal management, crucial for high power applications.

Minimum DC Current Gain (hFE): 20

An hFE of 20 means this transistor can effectively amplify current, making it suitable for low power devices requiring signal boost.

Maximum Operating Temperature: 200 °C

A high maximum operating temperature ensures reliability in extreme conditions, allowing it to function effectively in a wide range of environments.

Maximum Collector-Base Capacitance: 3.5 pF

Low capacitance is advantageous for high-speed applications, reducing signal distortion and allowing for clearer signal processing.

Transistor Element Material: SILICON

Silicon transistors provide excellent thermal stability and performance, ideal for various electronic applications.

Maximum Collector Current (IC): 0.425 A

With a maximum collector current of 0.425 Amps, this transistor can drive moderate loads effectively, making it versatile for different applications.

Terminal Position: RADIAL

Radial terminal positioning allows for compact PCB layouts, optimizing space in electronic circuit designs.

Nominal Transition Frequency (fT): 700 MHz

A transition frequency of 700 MHz indicates the transistor's ability to operate efficiently at high frequencies, suitable for RF applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) 2N4429 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3.5 pF

Configuration:

Minimum DC Current Gain (hFE):

20

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-117

JESD-30 Code:

O-XRPM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

5 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N4429 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-998-9314, 5961009989314, 5961-00-246-2427, 5961002462427, 5961-00-132-5466, 5961001325466, 5961-14-323-8376, 5961143238376, 5961-99-650-8817, 5961996508817

NIIN

009989314, 002462427, 001325466, 143238376, 996508817

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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