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2SC5227A-5-TB-E

Onsemi

2SC5227A-5-TB-E by Onsemi

Onsemi's 2SC5227A-5-TB-E is an NPN RF BJT with max power dissipation of 0.2W, hFE of 135, and fT of 5000MHz. Ideal for high-frequency applications in electronics due to its small signal capabilities and surface-mount configuration.

Median Price

$0.160

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 32 parts In-Stock

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$0.160

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Chip Stock

USA . 47,000 parts In-Stock

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Flip Electronics

USA . 2,890 parts In-Stock

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Electronic Treasures

USA . 2,080 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,972 parts In-Stock

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Bristol Electronics

USA . 1,972 parts In-Stock

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Vyrian

USA . 1,432 parts In-Stock

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Digiode

USA . 855 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 225 parts In-Stock

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$0.157

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Netroflash

USA . 500 parts In-Stock

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$0.160

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$0.152

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$0.149

500

$0.160

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$0.149

Component Stockers USA

USA . 156 parts In-Stock

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$0.490

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$0.230

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156

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AZTECH Wire

Italy . 353 parts In-Stock

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$7.382

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QUARKTWIN TECHNOLOGY LTD

USA . 14,449 parts In-Stock

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Metaverse IC Inc.

Canada . 9,000 parts In-Stock

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SupplyDigital Components

Austria . 5,056 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Kepictronics

USA . 4,000 parts In-Stock

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Kulean Microsystems

USA . 3,014 parts In-Stock

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Glotronic Ltd.

UK . 2,900 parts In-Stock

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Perfect Parts

USA . 2,243 parts In-Stock

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Corphita

USA . 1,677 parts In-Stock

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Problanco Electronics

Mexico . 755 parts In-Stock

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UHIMA Technologies

Türkiye . 651 parts In-Stock

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Lixinc

USA . 625 parts In-Stock

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TANS Electronics

Latvia . 74 parts In-Stock

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Overview

Unleash the power of innovation with the 2SC5227A-5-TB-E by Onsemi, a top-of-the-line RF Small Signal Bipolar Junction Transistor. Manufactured by industry leader Onsemi, this NPN transistor offers unmatched quality and reliability for a wide range of applications. Whether you're in the telecommunications, automotive, or industrial sector, this transistor provides exceptional performance and efficiency. Elevate your projects with the 2SC5227A-5-TB-E and experience the superior value and benefits it brings to your work.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits due to their high input impedance and current amplification capabilities.

Configuration: SINGLE

Single configuration makes it easier to integrate into circuits and reduces complexity.

Surface Mount: YES

Surface mount capability allows for easy soldering onto PCBs, saving space and improving reliability.

Maximum Power Dissipation (Abs): 0.2 W

With a high power dissipation capacity, this transistor can handle larger power levels without overheating.

Minimum DC Current Gain (hFE): 135

Higher DC current gain ensures efficient amplification and signal processing.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without performance degradation, suitable for various applications.

Maximum Collector Current (IC): 0.07 A

Capable of handling moderate current levels, making it versatile for different circuit requirements.

Terminal Finish: TIN BISMUTH

Tin bismuth finish provides good solderability and reliability in different environments.

Maximum Time At Peak Reflow Temperature (s): 30

Short peak reflow time ensures minimal exposure to high temperatures, reducing the risk of thermal damage.

Peak Reflow Temperature °C: 260

High peak reflow temperature allows for quick and efficient soldering during assembly.

Nominal Transition Frequency (fT): 5000 MHz

High transition frequency enables fast switching and high-frequency operation in RF applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) 2SC5227A-5-TB-E attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

135

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Maximum Time At Peak Reflow Temperature (s):

30

Nominal Transition Frequency (fT):

Trade Compliance

2SC5227A-5-TB-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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