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2SA1960

Hitachi

2SA1960 by Hitachi

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .3 A;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 273 parts In-Stock

1+ parts

$12.257

100+ parts

-

1k+ parts

-

10k+ parts

-

273

$12.257

-

-

-

Northwest PG Solutions

USA . 1,982 parts In-Stock

1+ parts

$13.483

100+ parts

$12.135

1k+ parts

-

10k+ parts

-

1,982

$13.483

$12.135

-

-

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) 2SA1960 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Hitachi

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

4 pF

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SA1960 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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