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JANS2N3866

Renesas Electronics

JANS2N3866 by Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .4 A; Maximum Collector-Emitter Voltage: 30 V; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

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JANS2N3866 by Renesas Electronics
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Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) JANS2N3866 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Renesas Electronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3.5 pF

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-205AD

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Reference Standard:

MIL-19500

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

JANS2N3866 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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