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MPSH10RLRE

Onsemi

MPSH10RLRE by Onsemi

MPSH10RLRE by Onsemi is an NPN RF BJT with a max collector-emitter voltage of 25V and fT of 650MHz. It is used in ultra-high frequency applications due to its low capacitance (0.7pF) and high temp rating (150 °C). The transistor's through-hole package makes it suitable for various cylindrical style designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,317 parts In-Stock

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Vyrian

USA . 767 parts In-Stock

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TANS Electronics

Latvia . 7,055 parts In-Stock

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Problanco Electronics

Mexico . 5,227 parts In-Stock

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Kulean Microsystems

USA . 4,566 parts In-Stock

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SupplyDigital Components

Austria . 4,363 parts In-Stock

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UHIMA Technologies

Türkiye . 766 parts In-Stock

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Corphita

USA . 422 parts In-Stock

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Corohmni

South Africa . 328 parts In-Stock

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Overview

Enhance your RF circuit designs with the high-quality MPSH10RLRE by Onsemi. This NPN bipolar junction transistor offers unmatched performance in ultra-high frequency applications, making it a versatile choice for a wide range of projects. With Onsemi's reputation for excellence and innovation, you can trust that this transistor will exceed your expectations. Whether you're working on telecommunications, radar systems, or other RF applications, the MPSH10RLRE delivers exceptional value, reliability, and efficiency. Elevate your designs with this powerful component from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifying signals and switching applications, making this transistor versatile.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to work with in various electronic projects.

Package Shape: ROUND

Allows for easy mounting and placement in circular layouts or designs.

Terminal Form: THROUGH-HOLE

Enables easy and secure soldering onto circuit boards, ensuring reliable connections.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Suitable for high-frequency applications such as radio communication, radar systems, and microwave technology.

No. of Terminals: 3

Provides necessary connectivity for different circuit configurations and applications.

Package Style (Meter): CYLINDRICAL

Compact design that can easily fit into various electronic devices and equipment.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, ensuring stable performance in demanding environments.

Maximum Collector-Base Capacitance: 0.7 pF

Low capacitance helps in reducing signal distortion and improving overall performance.

Maximum Collector-Emitter Voltage: 25 V

Suitable for low-voltage applications while providing a safety margin for voltage spikes.

Transistor Element Material: SILICON

Silicon transistors offer good performance, reliability, and efficiency in electronic circuits.

Terminal Finish: TIN LEAD

Provides good solderability and conductivity for reliable connections in circuits.

Terminal Position: BOTTOM

Enables easy PCB mounting and soldering, facilitating efficient assembly processes.

Nominal Transition Frequency (fT): 650 MHz

High transition frequency allows for fast switching speeds and high-frequency operation.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MPSH10RLRE attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector-Base Capacitance:

.7 pF

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSH10RLRE Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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