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NE85630-T1-A

Renesas Electronics

NE85630-T1-A by Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4500 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;

Median Price

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Lantek

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3,000

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Component Stockers USA

USA . 660 parts In-Stock

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$99.990

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660

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Kepictronics

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33,000

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Perfect Parts

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11,648

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A-Z Elektronik GmbH

Germany . 7,800 parts In-Stock

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7,800

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Authorized Procurement Solutions

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3,000

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GreenTree Electronics

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3,000

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Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) NE85630-T1-A attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Renesas Electronics

Specs

Additional Features:

LOW NOISE, HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1.5 pF

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Highest Frequency Band:

L BAND

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NE85630-T1-A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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