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NTE123A

Nte Electronics

NTE123A by Nte Electronics

NTE123A by Nte Electronics is a NPN RF BJT transistor with max. collector-emitter voltage of 40V, fT of 300MHz, and hFE min. of 100. Ideal for high-frequency switching applications due to its very high frequency band capability and max. power dissipation of 0.4W in a cylindrical package with wire terminals.

Median Price

$1.920

Lifecycle Status

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DigiKey

USA . 328 parts In-Stock

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$1.330

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$1.100

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$1.100

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$1.100

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$1.330

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$1.100

Master Electronics

USA . 82 parts In-Stock

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$1.870

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$1.700

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$1.220

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$1.120

82

$1.870

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$1.120

Newark

USA . 340 parts In-Stock

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$1.970

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$1.640

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$1.510

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$1.970

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Verical

USA . 1,025 parts In-Stock

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$2.252

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$1.531

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Distrelec

Netherlands . 334 parts In-Stock

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Freelance Electronics

USA . 100 parts In-Stock

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$1.070

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$1.123

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$1.059

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$1.070

$1.123

$1.059

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DigiKey Marketplace

USA . 467 parts In-Stock

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$1.330

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$1.100

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Hutch & Son

USA . 10 parts In-Stock

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$1.330

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TME

Poland . 18 parts In-Stock

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$1.720

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$1.230

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$1.230

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$1.230

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$1.720

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$1.230

Ace Electronics

USA . 6 parts In-Stock

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$2.630

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$2.630

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Component Electronics Inc.

Canada . 32 parts In-Stock

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$5.000

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$3.750

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$3.250

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$5.000

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Electro Sonic

Canada . 7,793 parts In-Stock

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$1.143

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$1.061

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Vyrian

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Nova Conductors

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Electronic Supply

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Electronic Expediters

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Semi Source

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Mil-Aero Solutions, Inc.

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American Connector Supply Corp

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Manotoh

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Resion

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Connector Distribution Corp

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Right Parts Inc.

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American Microsemiconductor Inc.

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Sunrise Surplus Inc.

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Lead Electronics, Inc.

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EMSNET

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Beckwith Electronics

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MISTER SPROCKETS

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PC Components Company LLC

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Bristol Electronics

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First Choice Components Inc.

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Classic Components Corporation

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Microchip USA

USA . 2,000 parts In-Stock

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$8.645

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Netroflash

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Perfect Parts

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Overview

Unlock endless possibilities with the NTE123A by Nte Electronics, a high-quality RF Small Signal Bipolar Junction Transistor designed for switching applications in the very high frequency band. With a maximum power dissipation of 0.4W and a maximum collector current of 0.8A, this NPN transistor offers exceptional performance and reliability. Whether you're a hobbyist or a professional, this product is the perfect choice for your electronic projects. Trust in Nte Electronics to deliver top-notch components that exceed expectations.

Feature Benefit Bullets

Package Body Material: METAL

The metal package body material provides durability and protection for the transistor, making it suitable for various industrial applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering high gain and low noise operation.

Configuration: SINGLE

Single configuration transistors are easy to use and integrate into circuit designs, making them versatile for different applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speed and low ON-resistance for efficient performance.

Package Shape: ROUND

The round package shape allows for easy mounting and heat dissipation, ideal for compact designs and high-frequency applications.

Terminal Form: WIRE

Wire terminals make it convenient to connect the transistor in circuits, providing a secure and reliable connection.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Operating in the very high frequency band ensures high-speed performance and efficient operation for demanding RF applications.

No. of Terminals: 3

With 3 terminals, this transistor can be easily connected in circuits for proper functioning and control.

Maximum Power Dissipation (Abs): 0.4 W

With a maximum power dissipation of 0.4W, this transistor can handle moderate power levels without overheating.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers a compact and space-saving design, suitable for applications where size is a constraint.

Minimum DC Current Gain (hFE): 100

Having a minimum DC current gain of 100 ensures stable and consistent amplification in various circuit configurations.

Maximum Collector-Emitter Voltage: 40 V

A high maximum collector-emitter voltage of 40V allows for operation in a wide range of voltage levels, making it versatile for different applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance, low noise, and reliability, making them a popular choice for various electronic applications.

Maximum Collector Current (IC): 0.8 A

Capable of handling a maximum collector current of 0.8A, this transistor is suitable for applications requiring moderate current levels.

Terminal Position: BOTTOM

Bottom terminal position makes it easy to mount and connect the transistor in circuit layouts, ensuring accurate placement and operation.

Nominal Transition Frequency (fT): 300 MHz

With a nominal transition frequency of 300MHz, this transistor offers high-speed performance for RF signal processing and communication applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) NTE123A attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Nte Electronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

100

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-18

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NTE123A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-336-9367, 5961003369367

NIIN

003369367

Manufacturer Highlights

Nte Electronics

Founded in New Jersey in 1979, NTE Electronics, Inc has grown from a small-town supplier with ten semiconductors in its entire line to the largest aftermarket semiconductor supplier in the industry. Today, our product line consists of over 23,000 devices. Included in this offering is NTE Brand Semiconductors. In January 2001 NTE acquired the assets of the ECG division of Philips N.A. With this addition, NTE became the industry leader in supplying private label aftermarket electronic components to the Industrial, Commercial, Consumer, and MRO marketplace. NTE is a Master Distributor for some of the industry's major manufacturers of electronic components and accessories. NTE's 40,000 square foot headquarters in Bloomfield, NJ houses, under one roof, all the essential services and inventory to continually supply electronic components to its worldwide network of authorized distributors. NTE's warehouse maintains a large inventory of each device to ensure a 98% fill rate and an average 24-hour shipping time. NTE devices are quality tested to consistently assure that they meet or exceed the industry specifications of the device they are replacing. They have been used in NASA space projects, German automobiles, hospital/medical applications and in virtually every type of consumer item. NTE's global network of distributors extends across the United States, Canada, Latin America, the Caribbean and 35 other countries throughout the world. No matter how you measure success, NTE Electronics, Inc has become the leader in the replacement electronic component industry.

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