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NESG2101M05-A

Renesas Electronics

NESG2101M05-A by Renesas Electronics

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 130;

Median Price

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Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,787 parts In-Stock

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7,787

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Distributors (Availability)

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AZTECH Wire

Italy . 606 parts In-Stock

1+ parts

$17.380

100+ parts

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606

$17.380

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Perfect Parts

USA . 134 parts In-Stock

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134

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Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) NESG2101M05-A attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Renesas Electronics

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

130

No. of Elements:

1

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

BIP RF Small Signal

Surface Mount:

YES

Transistor Element Material:

SILICON GERMANIUM

Trade Compliance

NESG2101M05-A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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