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NESG2101M05-T1-A

Renesas Electronics

NESG2101M05-T1-A by Renesas Electronics

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 130;

Median Price

$0.646

Lifecycle Status

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4

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1k+

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Rochester

USA . 5,676 parts In-Stock

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$0.634

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$0.526

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$0.469

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$0.634

$0.526

$0.469

Verical

USA . 5,676 parts In-Stock

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$0.658

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$0.587

5,676

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$0.658

$0.587

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Cyclops Electronics Ltd

UK . 23,000 parts In-Stock

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Vyrian

USA . 11,870 parts In-Stock

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AZTECH Wire

Italy . 564 parts In-Stock

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$18.670

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564

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Perfect Parts

USA . 35,840 parts In-Stock

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Kepictronics

USA . 35,100 parts In-Stock

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 11,970 parts In-Stock

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Assy Fe

Spain . 1,150 parts In-Stock

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Futuretech Components

Singapore . 665 parts In-Stock

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Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) NESG2101M05-T1-A attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Renesas Electronics

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

130

No. of Elements:

1

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

BIP RF Small Signal

Surface Mount:

YES

Transistor Element Material:

SILICON GERMANIUM

Trade Compliance

NESG2101M05-T1-A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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