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BSR12,215

NXP Semiconductors

BSR12,215 by NXP Semiconductors

BSR12,215 by NXP Semiconductors is a PNP RF small signal BJT designed for switching applications. It features a max collector current of 0.1 A, operates up to 150 °C, and supports frequencies in the S band with a nominal transition frequency of 1500 MHz. Its compact surface mount design ensures efficient performance in electronic circuits.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 11,435 parts In-Stock

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Digiode

USA . 2,165 parts In-Stock

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Anansix

USA . 1,265 parts In-Stock

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Corohmni

South Africa . 105 parts In-Stock

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$0.517

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105

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Advanced Electronics

New Zealand . 150 parts In-Stock

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$1.244

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$1.132

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$1.020

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150

$1.244

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AZTECH Wire

Italy . 292 parts In-Stock

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$16.990

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292

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One Stop Electronics

USA . 374 parts In-Stock

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$55.050

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374

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UNI Independent Distributors

Spain . 7,918 parts In-Stock

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Corphita

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Northwest PG Solutions

USA . 979 parts In-Stock

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Native Components

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Microchip USA

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Overview

Unlock the potential of your electronic designs with the BSR12,215 from NXP Semiconductors—a trusted leader in innovative solutions. This high-quality PNP transistor delivers exceptional performance for switching applications, ensuring reliability and efficiency in compact packages. With its robust thermal characteristics and impressive frequency response, the BSR12,215 is perfect for modern RF applications, empowering engineers to achieve superior outcomes while simplifying their designs. Choose NXP for unmatched quality and innovation!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package offers durability and reliability, making it suitable for various applications.

Polarity or Channel Type: PNP

The PNP configuration allows for versatile circuit designs, particularly in switching applications where high efficiency is desired.

Configuration: SINGLE

A single configuration simplifies the design and integration into circuits, reducing potential complexity.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor ensures efficient operation in dynamic environments.

Surface Mount: YES

Surface mount capability allows for compact PCB designs, essential for modern electronic devices.

Package Shape: RECTANGULAR

The rectangular shape optimizes space on the PCB and enhances thermal performance, making it ideal for dense layouts.

Terminal Form: GULL WING

Gull-wing terminals improve soldering reliability and ensure a secure connection to the PCB.

Highest Frequency Band: S BAND

Operating in the S band makes this transistor suitable for applications in communications and radar systems.

No. of Terminals: 3

A 3-terminal design simplifies the circuit integration and allows for straightforward connection and layout.

Maximum Power Dissipation (Abs): 0.25 W

With a maximum power dissipation of 0.25 W, this transistor can handle moderate loads efficiently.

Package Style (Meter): SMALL OUTLINE

The small outline package facilitates high-density board designs, crucial for space-constrained applications.

Minimum DC Current Gain (hFE): 30

A minimum DC current gain of 30 indicates good performance, ensuring effective amplification in switching circuits.

Maximum Operating Temperature: 150 °C

A high operating temperature threshold enhances reliability in harsh conditions, making it suitable for various environments.

Maximum Collector-Base Capacitance: 4.5 pF

Low collector-base capacitance improves switching speeds, valuable in precision applications.

Maximum Collector-Emitter Voltage: 15 V

The 15 V maximum voltage rating provides versatility across different circuit designs while ensuring safety.

Transistor Element Material: SILICON

Silicon material provides excellent thermal stability and performance, making this BJT reliable for various applications.

Maximum Collector Current (IC): 0.1 A

A maximum collector current of 0.1 A allows the transistor to operate effectively in low to moderate power circuits.

Terminal Finish: MATTE TIN

Matte tin finish enhances solderability and corrosion resistance, improving long-term reliability.

Terminal Position: DUAL

Dual terminal position enables flexible PCB layout options, facilitating easier design integration.

Peak Reflow Temperature °C: 260

A peak reflow temperature of 260 °C indicates compatibility with lead-free soldering processes, supporting environmentally friendly manufacturing.

Nominal Transition Frequency (fT): 1500 MHz

With a nominal transition frequency of 1500 MHz, this transistor is ideal for high-frequency applications, such as RF communication.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BSR12,215 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

4.5 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

30

Highest Frequency Band:

S BAND

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BSR12,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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