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BSR12/C,215

NXP Semiconductors

BSR12/C,215 by NXP Semiconductors

BSR12/C,215 by NXP Semiconductors is a PNP RF small signal BJT designed for switching applications. It features a max collector-emitter voltage of 15V, a nominal transition frequency of 1500 MHz, and comes in a compact surface mount package. Ideal for S-band operations, it ensures efficient performance in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Anansix

USA . 2,834 parts In-Stock

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Digiode

USA . 1,165 parts In-Stock

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Vyrian

USA . 30 parts In-Stock

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30

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One Stop Electronics

USA . 1,096 parts In-Stock

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$14.050

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$14.050

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Corphita

USA . 3,638 parts In-Stock

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UNI Independent Distributors

Spain . 3,035 parts In-Stock

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Northwest PG Solutions

USA . 1,636 parts In-Stock

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Native Components

USA . 8 parts In-Stock

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Overview

Unlock the power of innovation with the BSR12/C,215 from NXP Semiconductors, a trusted leader in cutting-edge technology. This PNP RF Small Signal Bipolar Junction Transistor is designed for seamless switching applications, delivering exceptional performance in a compact package. Experience reliability and efficiency in your designs, whether for consumer electronics or communication systems. Choose NXP for quality you can trust and elevate your projects with unmatched benefits!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body enhances durability and insulation, making it suitable for various environmental conditions.

Polarity or Channel Type: PNP

As a PNP transistor, it allows for easy integration in circuits that require high-side switching, making it ideal for a variety of applications.

Configuration: SINGLE

The single configuration offers simplicity in design, ensuring ease of integration into compact layouts.

Transistor Application: SWITCHING

Optimized for switching applications, this transistor provides fast response times, enhancing overall circuit performance.

Surface Mount: YES

Being a surface mount device (SMD) allows for space-saving designs and is compatible with automated manufacturing processes.

Package Shape: RECTANGULAR

The rectangular shape ensures efficient use of board space while providing stable mounting characteristics.

Terminal Form: GULL WING

Gull wing terminals facilitate easier soldering and provide a better mechanical connection, ensuring reliable performance.

Highest Frequency Band: S BAND

Operating within the S band enables its use in communication systems, radar, and various RF applications.

No. of Terminals: 3

The 3-terminal configuration is standard, simplifying the design process and making it widely compatible with various circuits.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for compact circuit design without sacrificing performance.

Maximum Collector-Base Capacitance: 4.5 pF

A low collector-base capacitance ensures high-speed operation, making it suitable for applications requiring rapid switching.

Maximum Collector-Emitter Voltage: 15 V

The 15V maximum collector-emitter voltage provides a good balance of performance and safety for various electronic applications.

Transistor Element Material: SILICON

Silicon as the transistor element material offers excellent thermal stability and electronic properties, contributing to reliable performance.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor is well-suited for low to moderate current applications, enhancing its versatility.

Terminal Position: DUAL

The dual terminal positioning improves connectivity and layout options for diverse circuit designs.

Nominal Transition Frequency (fT): 1500 MHz

The high transition frequency of 1500 MHz indicates its capability to operate efficiently in high-frequency applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BSR12/C,215 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

4.5 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Highest Frequency Band:

S BAND

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

Moisture Sensitivity Level (MSL):

NOT APPLICABLE

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BSR12/C,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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