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BSR12/C

NXP Semiconductors

BSR12/C by NXP Semiconductors

BSR12/C from NXP Semiconductors is a PNP RF small signal BJT designed for switching applications. It features a max collector-emitter voltage of 15V, operates at frequencies up to 1500 MHz, and comes in a compact surface mount package. Ideal for S-band circuits, it ensures efficient performance in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,084 parts In-Stock

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4,084

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Vyrian

USA . 2,112 parts In-Stock

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2,112

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Anansix

USA . 1,740 parts In-Stock

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1,740

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Distributors (Availability)

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Native Components

USA . 142 parts In-Stock

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$0.066

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$0.063

142

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$0.063

Northwest PG Solutions

USA . 434 parts In-Stock

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$0.073

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$0.064

434

$0.073

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$0.064

One Stop Electronics

USA . 574 parts In-Stock

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$26.050

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574

$26.050

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UNI Independent Distributors

Spain . 7,294 parts In-Stock

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Corphita

USA . 2,656 parts In-Stock

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Overview

Elevate your designs with the BSR12/C from NXP Semiconductors, a trusted leader in innovation. This high-performance PNP transistor excels in switching applications, ensuring reliability and efficiency for your projects. Its compact footprint and surface mount design make integration seamless, while its exceptional frequency response guarantees top-notch performance. Choose BSR12/C for unmatched quality, empowering your solutions with precision and durability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material ensures reliable performance and longevity, making it suitable for various applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into various circuits, especially in applications requiring a high-impedance input.

Configuration: SINGLE

A single configuration simplifies circuit design and reduces the overall footprint, making it ideal for compact applications.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can efficiently control electrical signals, enhancing circuit reliability.

Surface Mount: YES

Surface mount capability allows for automated assembly, which minimizes production costs and improves circuit density.

Package Shape: RECTANGULAR

The rectangular shape aids in space-efficient layout designs, facilitating easy integration into various circuit boards.

Terminal Form: GULL WING

Gull wing terminals improve solderability and mechanical strength, ensuring a robust connection on PCBs.

Highest Frequency Band: S BAND

Operating in the S band, this transistor is suitable for RF applications, ensuring effective signal transmission and reception.

No. of Terminals: 3

With three terminals, this transistor simplifies circuit connections while providing necessary functionality.

Package Style (Meter): SMALL OUTLINE

The small outline package contributes to a compact design, making it perfect for miniaturized electronics.

Maximum Collector-Base Capacitance: 4.5 pF

Low collector-base capacitance minimizes signal distortion, making this transistor suitable for high-frequency applications.

Maximum Collector-Emitter Voltage: 15 V

A maximum voltage rating of 15 V provides adequate headroom for various applications while ensuring safety and reliability.

Transistor Element Material: SILICON

Silicon material offers excellent thermal performance and reliability, ensuring stable operation under varying conditions.

Maximum Collector Current (IC): 0.1 A

This current rating is adequate for many small-signal applications, providing flexibility in circuit design.

Terminal Position: DUAL

Dual terminal positioning enables easier routing on the PCB, enhancing design flexibility and integration.

Nominal Transition Frequency (fT): 1500 MHz

A high transition frequency of 1500 MHz makes this transistor suitable for high-speed switching applications, improving performance.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BSR12/C attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

4.5 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Highest Frequency Band:

S BAND

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

Moisture Sensitivity Level (MSL):

NOT APPLICABLE

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BSR12/C Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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