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BSR12T/R

NXP Semiconductors

BSR12T/R by NXP Semiconductors

BSR12T/R by NXP Semiconductors is a PNP RF small signal BJT designed for switching applications. It features a max VCEsat of 0.45V, 150 °C operating temp, and a nominal transition frequency of 1500MHz. Ideal for compact electronic designs with surface mount capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 3,369 parts In-Stock

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3,369

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Anansix

USA . 215 parts In-Stock

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215

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Vyrian

USA . 105 parts In-Stock

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105

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Native Components

USA . 874 parts In-Stock

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$0.054

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$0.052

874

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$0.052

One Stop Electronics

USA . 279 parts In-Stock

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$28.050

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279

$28.050

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Legend Electronics Inc. (Excess)

USA . 8,000 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 8,000 parts In-Stock

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8,000

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UNI Independent Distributors

Spain . 5,210 parts In-Stock

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5,210

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Corphita

USA . 1,061 parts In-Stock

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Northwest PG Solutions

USA . 342 parts In-Stock

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Overview

Unlock the potential of your designs with the BSR12T/R from NXP Semiconductors, a trusted leader in semiconductor technology. This PNP transistor delivers exceptional reliability for switching applications, designed to enhance performance while simplifying integration into your projects. With its compact size and efficient power management, the BSR12T/R offers remarkable value, ensuring you achieve optimal results while benefiting from NXP's commitment to quality and innovation. Elevate your next project with a component you can rely on!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy makes the transistor lightweight and suitable for various applications without compromising durability.

Polarity or Channel Type: PNP

This PNP configuration enables the transistor to efficiently control high-side switching applications, enhancing circuit design versatility.

Configuration: SINGLE

A single configuration simplifies design and integration into PCBs, making it ideal for compact electronic applications.

Transistor Application: SWITCHING

Optimized for switching applications, this transistor can manage quick on-off cycles, which is essential for modern digital circuits.

Surface Mount: YES

Surface mount capabilities lead to reduced space requirements on circuit boards, allowing for more compact and efficient designs.

Maximum VCEsat: 0.45 V

A low maximum VCEsat ensures efficient power usage and minimal heat generation, enhancing overall circuit efficiency.

Package Shape: RECTANGULAR

The rectangular package shape facilitates effective space utilization on PCB, allowing for easier layout and component placement.

Terminal Form: GULL WING

Gull wing terminals provide reliable mechanical support and ease of soldering, leading to enhanced manufacturing efficiency.

No. of Terminals: 3

With 3 terminals, this transistor is straightforward to integrate into various circuit designs without the complexity of additional connections.

Maximum Power Dissipation (Abs): 0.25 W

A maximum power dissipation of 0.25 W allows the transistor to operate efficiently in low-power applications, enhancing thermal management.

Package Style (Meter): SMALL OUTLINE

The small outline package style makes it well suited for high-density applications, where space-saving is crucial.

Minimum DC Current Gain (hFE): 20

A minimum DC current gain of 20 ensures sufficient amplification for a wide range of low-signal applications.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature allows the transistor to function reliably in demanding environments, providing robust performance.

Maximum Collector-Base Capacitance: 4.5 pF

Low collector-base capacitance minimizes delays and contributes to faster switching speeds, which is vital in high-frequency circuits.

Maximum Collector-Emitter Voltage: 15 V

The maximum collector-emitter voltage of 15 V makes the transistor suitable for a broad range of signal applications without risk of breakdown.

Transistor Element Material: SILICON

Silicon as the element material offers excellent electrical properties, reliability, and cost-effectiveness in semiconductor applications.

Maximum Turn On Time (ton): 20 ns

A fast turn-on time of 20 ns enhances the transistor's responsiveness, making it ideal for high-speed switching applications.

Maximum Collector Current (IC): 0.1 A

A collector current of 0.1 A allows the transistor to drive moderate loads, making it versatile for various switching tasks.

Maximum Turn Off Time (toff): 30 ns

A quick turn-off time of 30 ns contributes to efficient performance in switching applications, essential for precision circuit operations.

Terminal Position: DUAL

Dual terminal positioning provides flexible connection options, enhancing compatibility with different circuit designs.

Nominal Transition Frequency (fT): 1500 MHz

A high transition frequency of 1500 MHz allows this transistor to be effective in RF applications, ensuring good performance at higher frequencies.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BSR12T/R attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

4.5 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

20

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

30 ns

Maximum Turn On Time (ton):

20 ns

Maximum VCEsat:

.45 V

Trade Compliance

BSR12T/R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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