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2SC5754-T2-A

Renesas Electronics

2SC5754-T2-A by Renesas Electronics

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .735 W; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 40; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

Median Price

$0.564

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Rochester

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$0.468

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$0.417

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$0.564

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AZTECH Wire

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QUARKTWIN TECHNOLOGY LTD

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Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) 2SC5754-T2-A attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Renesas Electronics

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

40

No. of Elements:

1

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

BIP RF Small Signal

Surface Mount:

YES

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Trade Compliance

2SC5754-T2-A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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