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2SC5754-A

Renesas Electronics

2SC5754-A by Renesas Electronics

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .735 W; Maximum Collector Current (IC): .5 A; No. of Elements: 1; Transistor Element Material: SILICON;

Median Price

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Lifecycle Status

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Vyrian

USA . 4,328 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 924 parts In-Stock

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924

$8.700

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Component Stockers USA

USA . 309 parts In-Stock

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$99.990

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309

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Native Components

USA . 442 parts In-Stock

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442

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Northwest PG Solutions

USA . 171 parts In-Stock

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171

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Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) 2SC5754-A attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Renesas Electronics

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

40

No. of Elements:

1

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

BIP RF Small Signal

Surface Mount:

YES

Transistor Element Material:

SILICON

Trade Compliance

2SC5754-A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Renesas Electronics

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