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BFU690F,115

NXP Semiconductors

BFU690F,115 by NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 18000 MHz; Maximum Power Dissipation (Abs): .23 W; Maximum Collector Current (IC): .1 A;

Median Price

$0.394

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 95 parts In-Stock

1+ parts

$0.170

100+ parts

$0.170

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$0.160

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95

$0.170

$0.170

$0.160

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Mouser Electronics

USA . 616 parts In-Stock

1+ parts

$1.030

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$0.417

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$0.278

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$0.235

616

$1.030

$0.417

$0.278

$0.235

DigiKey

USA . 18,000 parts In-Stock

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$0.230

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$0.230

Verical

USA . 5,400 parts In-Stock

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$0.405

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$0.307

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$0.405

$0.307

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Chip1Stop

Japan . 5,350 parts In-Stock

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$0.394

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$0.275

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$0.215

5,350

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$0.394

$0.275

$0.215

Distributors (In-Stock)

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Vyrian

USA . 137 parts In-Stock

1+ parts

$0.371

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VNN

France . 6,322 parts In-Stock

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Digiode

USA . 3,199 parts In-Stock

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North Shore Components

USA . 2,021 parts In-Stock

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2,021

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Anansix

USA . 625 parts In-Stock

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625

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Nova Conductors

Japan . 600 parts In-Stock

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600

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Distributors (Availability)

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Ampacity Inc.

Singapore . 5,506 parts In-Stock

1+ parts

$0.338

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5,506

$0.338

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Advanced Electronics

New Zealand . 650 parts In-Stock

1+ parts

$1.666

100+ parts

$1.516

1k+ parts

$1.366

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650

$1.666

$1.516

$1.366

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AZTECH Wire

Italy . 899 parts In-Stock

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$16.320

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899

$16.320

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QUARKTWIN TECHNOLOGY LTD

USA . 13,089 parts In-Stock

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Microchip USA

USA . 5,333 parts In-Stock

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UNI Independent Distributors

Spain . 4,578 parts In-Stock

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Perfect Parts

USA . 2,158 parts In-Stock

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iodParts Technologies Inc.

India . 1,205 parts In-Stock

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Corphita

USA . 600 parts In-Stock

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600

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Netroflash

USA . 50 parts In-Stock

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50

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Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFU690F,115 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

5.5 V

Configuration:

Minimum DC Current Gain (hFE):

90

Highest Frequency Band:

KA BAND

JESD-30 Code:

R-PDSO-F4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

BIP RF Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFU690F,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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