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BFU630F,115

NXP Semiconductors

BFU630F,115 by NXP Semiconductors

NXP Semiconductors' BFU630F,115 is an NPN RF BJT transistor with a max power dissipation of 0.2W and min DC current gain of 90. Suitable for surface mount applications, it has a max collector current of 0.03A making it ideal for low-power RF amplification circuits.

Median Price

$0.469

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 50,900 parts In-Stock

1+ parts

$0.170

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$0.170

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$0.160

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50,900

$0.170

$0.170

$0.160

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Chip1Stop

Japan . 1,940 parts In-Stock

1+ parts

-

100+ parts

$0.469

1k+ parts

$0.330

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$0.281

1,940

-

$0.469

$0.330

$0.281

Verical

USA . 1,940 parts In-Stock

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100+ parts

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1k+ parts

$0.873

10k+ parts

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1,940

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-

$0.873

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Distributors (In-Stock)

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Digiode

USA . 306 parts In-Stock

1+ parts

$0.269

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306

$0.269

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Vyrian

USA . 2,310 parts In-Stock

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$0.283

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2,310

$0.283

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VNN

France . 5,660 parts In-Stock

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5,660

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Flip Electronics

USA . 2,960 parts In-Stock

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2,960

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Anansix

USA . 936 parts In-Stock

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936

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

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Corphita

USA . 833 parts In-Stock

1+ parts

$0.255

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833

$0.255

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Perfect Parts

USA . 16,800 parts In-Stock

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16,800

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UNI Independent Distributors

Spain . 7,326 parts In-Stock

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7,326

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Futuretech Components

Singapore . 2,000 parts In-Stock

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2,000

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Robosynatics

Brazil . 200 parts In-Stock

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200

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Lucentia Tech

USA . 200 parts In-Stock

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$1.432

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$1.326

10k+ parts

$1.326

200

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$1.432

$1.326

$1.326

Continental Prestige Electronics

USA . 182 parts In-Stock

1+ parts

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$0.293

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$0.173

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182

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$0.293

$0.173

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Netroflash

USA . 50 parts In-Stock

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50

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Overview

Discover the cutting-edge technology of the NXP Semiconductors BFU630F,115 RF Small Signal Bipolar Junction Transistor. With its NPN polarity and Silicon material, this transistor offers unmatched performance and reliability for various applications. From wireless communication to industrial automation, this surface-mount transistor delivers superior power dissipation and high DC current gain. Trust NXP Semiconductors for quality and innovation that exceeds expectations. Upgrade your electronics with the BFU630F,115 and experience the difference.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering fast response times and low switching losses.

Surface Mount: YES

Surface mount packaging enables easy and efficient PCB assembly, saving space and reducing manufacturing costs.

Maximum Power Dissipation (Abs): 0.2 W

With a high maximum power dissipation rating, this transistor can handle relatively high power levels without overheating, making it reliable in various applications.

Minimum DC Current Gain (hFE): 90

A high minimum DC current gain allows for better amplification of weak signals and more stable operation in amplification circuits.

Transistor Element Material: SILICON

Silicon transistors are widely used due to their high voltage ratings, low leakage current, and excellent thermal performance.

Maximum Collector Current (IC): 0.03 A

With a maximum collector current of 0.03 A, this transistor can handle moderate current levels, suitable for small signal applications.

Terminal Finish: TIN

Tin terminal finish provides good solderability and corrosion resistance, ensuring reliable electrical connections during PCB assembly and operation.

Maximum Time At Peak Reflow Temperature (s): 30

The specified maximum time at peak reflow temperature ensures proper soldering and reflow processes during assembly, preventing damage to the transistor.

Peak Reflow Temperature °C: 260

The high peak reflow temperature rating of 260°C allows for safe and effective soldering of the transistor onto the PCB, ensuring robust and durable connections.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFU630F,115 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

90

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

BIP RF Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

BFU630F,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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