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BFU660F,115

NXP Semiconductors

BFU660F,115 by NXP Semiconductors

NXP Semiconductors' BFU660F,115 is an NPN RF Small Signal BJT with a max power dissipation of 0.225W and min DC current gain of 90. Ideal for applications requiring a surface mount transistor with a max collector current of 0.06A, such as RF amplifiers or oscillators.

Median Price

$0.216

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 69,099 parts In-Stock

1+ parts

$0.170

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$0.170

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$0.160

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69,099

$0.170

$0.170

$0.160

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Arrow

USA . 15,852 parts In-Stock

1+ parts

$0.323

100+ parts

$0.313

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$0.304

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$0.297

15,852

$0.323

$0.313

$0.304

$0.297

Chip1Stop

Japan . 25,138 parts In-Stock

1+ parts

-

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$0.216

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$0.203

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$0.202

25,138

-

$0.216

$0.203

$0.202

Verical

USA . 38 parts In-Stock

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38

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Digiode

USA . 4,608 parts In-Stock

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$0.213

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4,608

$0.213

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Vyrian

USA . 204 parts In-Stock

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$0.223

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204

$0.223

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Anansix

USA . 1,600 parts In-Stock

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1,600

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VNN

France . 800 parts In-Stock

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800

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

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Ampacity Inc.

Singapore . 8,965 parts In-Stock

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$0.178

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8,965

$0.178

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Corphita

USA . 2,548 parts In-Stock

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$0.202

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Microchip USA

USA . 3,968 parts In-Stock

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$4.290

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3,968

$4.290

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Continental Prestige Electronics

USA . 108,099 parts In-Stock

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$0.270

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108,099

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$0.270

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UNI Independent Distributors

Spain . 6,908 parts In-Stock

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Perfect Parts

USA . 6,720 parts In-Stock

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6,720

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A-Z Elektronik GmbH

Germany . 6,600 parts In-Stock

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6,600

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Futuretech Components

Singapore . 3,000 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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1,000

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Overview

Experience superior performance and reliability with the NXP Semiconductors BFU660F,115 RF Small Signal Bipolar Junction Transistor. As a trusted manufacturer in the industry, NXP delivers cutting-edge technology for a wide range of applications. With its NPN polarity and surface mount capability, this transistor offers maximum power dissipation of 0.225 W and a minimum DC current gain of 90, ensuring optimal efficiency. Whether you're designing communication systems or electronic devices, the BFU660F,115 provides unmatched value, benefits, and advantages for all your project needs. Upgrade to NXP for excellence in quality and performance.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits due to their high input impedance and low output impedance, making this product suitable for signal amplification applications.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, saving space and reducing production costs in electronic devices.

Maximum Power Dissipation (Abs): 0.225 W

The high maximum power dissipation allows for the transistor to handle larger power outputs without the risk of overheating, ensuring reliability in operation.

Minimum DC Current Gain (hFE): 90

A high DC current gain ensures that small input signals can control larger output signals effectively, providing efficient signal amplification.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making them suitable for a wide range of electronic applications.

Maximum Collector Current (IC): 0.06 A

With a high maximum collector current, this transistor can handle larger current loads, making it ideal for applications that require higher power handling capabilities.

Terminal Finish: TIN

Tin terminal finish provides good solderability and conductivity, ensuring easy and reliable connections during PCB assembly.

Maximum Time At Peak Reflow Temperature (s): 30

The short time at peak reflow temperature allows for efficient and consistent soldering during assembly, reducing the risk of component damage.

Peak Reflow Temperature °C: 260

A high peak reflow temperature ensures proper solder melting and bonding, resulting in durable and secure connections in the assembly process.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFU660F,115 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

90

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

BIP RF Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

BFU660F,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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