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BFU610F,115

NXP Semiconductors

BFU610F,115 by NXP Semiconductors

The NXP Semiconductors BFU610F,115 is an NPN RF BJT with a max power dissipation of 0.05W and min hFE of 70. Ideal for applications requiring a small signal transistor, such as in RF circuits for amplification or switching purposes.

Median Price

$0.264

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1,768 parts In-Stock

1+ parts

$0.237

100+ parts

$0.208

1k+ parts

$0.205

10k+ parts

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1,768

$0.237

$0.208

$0.205

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Rochester

USA . 3,140 parts In-Stock

1+ parts

-

100+ parts

$0.272

1k+ parts

$0.226

10k+ parts

$0.201

3,140

-

$0.272

$0.226

$0.201

Verical

USA . 3,000 parts In-Stock

1+ parts

-

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$0.339

3,000

-

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$0.339

Chip1Stop

Japan . 1,768 parts In-Stock

1+ parts

-

100+ parts

$0.255

1k+ parts

$0.205

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1,768

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$0.255

$0.205

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Distributors (In-Stock)

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Digiode

USA . 3,154 parts In-Stock

1+ parts

$0.048

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3,154

$0.048

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Vyrian

USA . 1,451 parts In-Stock

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$0.050

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1,451

$0.050

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Flip Electronics

USA . 141,000 parts In-Stock

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141,000

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DigiKey Marketplace

USA . 3,140 parts In-Stock

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Anansix

USA . 1,483 parts In-Stock

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1,483

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Distributors (Availability)

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Corphita

USA . 3,870 parts In-Stock

1+ parts

$0.045

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3,870

$0.045

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Native Components

USA . 627 parts In-Stock

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$0.144

100+ parts

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$0.139

627

$0.144

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$0.139

Northwest PG Solutions

USA . 1,751 parts In-Stock

1+ parts

$0.159

100+ parts

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1k+ parts

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$0.140

1,751

$0.159

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$0.140

Component Stockers USA

USA . 12,167 parts In-Stock

1+ parts

$0.290

100+ parts

$0.240

1k+ parts

$0.190

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12,167

$0.290

$0.240

$0.190

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Microchip USA

USA . 4,429 parts In-Stock

1+ parts

$4.290

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4,429

$4.290

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UNI Independent Distributors

Spain . 7,073 parts In-Stock

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Perfect Parts

USA . 6,922 parts In-Stock

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6,922

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Lixinc

USA . 4,743 parts In-Stock

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4,743

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Overview

Elevate your RF signal performance with the BFU610F,115 by NXP Semiconductors. Crafted with precision and expertise, this NPN RF Small Signal BJT offers unparalleled quality and reliability for various applications. With surface mount capabilities and a minimum DC current gain of 70, this transistor is perfect for amplifying signals with ease. Experience the value and benefits of superior performance with the BFU610F,115 – where innovation meets excellence.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile for various applications.

Surface Mount: YES

Surface mount technology allows for easy and efficient mounting on PCBs, saving space and reducing assembly time.

Maximum Power Dissipation (Abs): 0.05 W

With a maximum power dissipation of 0.05W, this transistor can handle moderate power levels, suitable for low-power applications.

Minimum DC Current Gain (hFE): 70

A high minimum DC current gain of 70 ensures reliable amplification performance in circuits.

Transistor Element Material: SILICON GERMANIUM

Silicon Germanium material offers improved performance and efficiency compared to traditional Silicon transistors.

Maximum Collector Current (IC): 0.01 A

With a maximum collector current of 0.01A, this transistor can handle low current levels efficiently.

Terminal Finish: TIN

Tin terminal finish provides good solderability and corrosion resistance, ensuring reliable electrical connections.

Maximum Time At Peak Reflow Temperature (s): 30

Designed to withstand peak reflow temperatures for up to 30 seconds, ensuring reliable performance during soldering processes.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this transistor can withstand high-temperature soldering processes without damage.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFU610F,115 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

70

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

BIP RF Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON GERMANIUM

Trade Compliance

BFU610F,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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