Loading...

1214-110M

Microsemi

1214-110M by Microsemi

Microsemi's 1214-110M is a NPN RF Power BJT with 270W power dissipation, suitable for L Band applications. It features a ceramic-metal-sealed co-fired package, flat terminal form, and dual terminal position. Ideal for amplifier circuits requiring up to 8A collector current in high temperature environments up to 200°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 15,783 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

15,783

-

-

-

-

VNN

France . 3,621 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,621

-

-

-

-

Nova Conductors

Japan . 40 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

40

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 273 parts In-Stock

1+ parts

$1.050

100+ parts

-

1k+ parts

-

10k+ parts

-

273

$1.050

-

-

-

Aztec Data Supply Inc.

USA . 4,366 parts In-Stock

1+ parts

$1.820

100+ parts

-

1k+ parts

-

10k+ parts

-

4,366

$1.820

-

-

-

AZTECH Wire

Italy . 805 parts In-Stock

1+ parts

$17.029

100+ parts

-

1k+ parts

-

10k+ parts

-

805

$17.029

-

-

-

Semicontronic

India . 844 parts In-Stock

1+ parts

$20.050

100+ parts

$19.549

1k+ parts

$19.448

10k+ parts

-

844

$20.050

$19.549

$19.448

-

Corohmni

South Africa . 372 parts In-Stock

1+ parts

$346.920

100+ parts

-

1k+ parts

-

10k+ parts

-

372

$346.920

-

-

-

Continental Prestige Electronics

USA . 2,543 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,543

-

-

-

-

Argo Parts USA

USA . 1,124 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,124

-

-

-

-

Bastille Electronics

Australia . 1,063 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,063

-

-

-

-

Overview

Elevate your amplifier performance with the 1214-110M by Microsemi, a top-tier RF Power Bipolar Junction Transistor. Known for their superior quality and cutting-edge technology, Microsemi delivers industry-leading products that redefine the standards of excellence. Ideal for L Band applications, this NPN transistor offers a maximum power dissipation of 270W and a maximum collector current of 8A, ensuring optimal efficiency and reliability. Upgrade your electronics with the 1214-110M and experience unparalleled performance like never before.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The use of ceramic and metal-sealed cofired package body material ensures durability and reliability in various operating conditions.

Polarity or Channel Type: NPN

NPN configuration allows for high electron mobility and efficient amplification of signals.

Transistor Application: AMPLIFIER

Designed specifically for amplification applications, providing high gain and low noise performance.

Surface Mount: YES

Allows for easy and convenient PCB mounting, saving space and simplifying assembly.

Package Shape: RECTANGULAR

Rectangular package shape offers versatility in mounting options and efficient use of PCB space.

Maximum Power Dissipation (Abs): 270 W

High power dissipation capability ensures reliable performance under demanding conditions.

Maximum Operating Temperature: 200 °C

Wide operating temperature range of up to 200°C enables operation in high heat environments.

Maximum Collector Current (IC): 8 A

Capable of handling high collector current, making it suitable for high power applications.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) 1214-110M attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Microsemi

Specs

Case Connection:

BASE

Maximum Collector Current (IC):

8 A

Configuration:

Highest Frequency Band:

L BAND

JESD-30 Code:

R-CDFM-F2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP RF Small Signal

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

1214-110M Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Microsemi

Microsemi Corporation, a wholly owned subsidiary of Microchip Technology Inc. (Nasdaq: MCHP), offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California.

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 15