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SINGLE RF Power Bipolar Junction Transistors (BJT) 22

RF Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
BDP948E6327HTSA1 by Infineon Technologies

BDP948E6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 3 A; JESD-609 Code: e3;

COLLECTOR

3 A

45 V

SINGLE

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

BDP950E6327HTSA1 by Infineon Technologies

BDP950E6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 3 A; Package Style (Meter): SMALL OUTLINE;

COLLECTOR

3 A

60 V

SINGLE

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

MAX2601ESA by Maxim Integrated

MAX2601ESA

Maxim Integrated

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; Transistor Element Material: SILICON; JESD-30 Code: R-PDSO-G8;

1.2 A

15 V

SINGLE

100

ULTRA HIGH FREQUENCY BAND

R-PDSO-G8

e0

1

1

8

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

AMPLIFIER

SILICON

SD1275-01 by STMicroelectronics

SD1275-01

STMicroelectronics

STMicroelectronics' SD1275-01 is a NPN RF BJT with 70W power dissipation, 160MHz fT, and 8A IC. Ideal for amplifier applications in the VHF band due to its high collector-emitter voltage of 16V and very high frequency band capability. Package style is flange mount with a round shape and flat terminals.

8 A

16 V

SINGLE

20

VERY HIGH FREQUENCY BAND

O-PRFM-F4

1

4

200 Cel

PLASTIC/EPOXY

ROUND

FLANGE MOUNT

NOT SPECIFIED

NPN

70 W

Not Qualified

Other Transistors

NO

FLAT

RADIAL

NOT SPECIFIED

AMPLIFIER

SILICON

160 MHz

1214-110M by Microsemi

1214-110M

Microsemi

Microsemi's 1214-110M is a NPN RF Power BJT with 270W power dissipation, suitable for L Band applications. It features a ceramic-metal-sealed co-fired package, flat terminal form, and dual terminal position. Ideal for amplifier circuits requiring up to 8A collector current in high temperature environments up to 200°C.

BASE

8 A

SINGLE

L BAND

R-CDFM-F2

e0

1

2

200 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLANGE MOUNT

NPN

270 W

Not Qualified

BIP RF Small Signal

YES

TIN LEAD

FLAT

DUAL

AMPLIFIER

SILICON

BLS2731-10,114 by NXP Semiconductors

BLS2731-10,114

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Additional Features: HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS; JESD-30 Code: R-CDFM-F2;

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

BASE

SINGLE

S BAND

R-CDFM-F2

1

2

150 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLANGE MOUNT

NPN

Not Qualified

YES

FLAT

DUAL

AMPLIFIER

SILICON

BLS2731-110,114 by NXP Semiconductors

BLS2731-110,114

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Package Shape: RECTANGULAR;

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

BASE

SINGLE

S BAND

R-CDFM-F2

1

2

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLANGE MOUNT

NPN

Not Qualified

YES

FLAT

DUAL

AMPLIFIER

SILICON

BLS2731-20,114 by NXP Semiconductors

BLS2731-20,114

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Case Connection: BASE; Package Style (Meter): FLANGE MOUNT;

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

BASE

SINGLE

S BAND

R-CDFM-F2

1

2

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLANGE MOUNT

NPN

Not Qualified

YES

FLAT

DUAL

AMPLIFIER

SILICON

BLS2731-50,114 by NXP Semiconductors

BLS2731-50,114

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; Qualification: Not Qualified; Transistor Application: AMPLIFIER;

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

BASE

SINGLE

S BAND

R-CDFM-F2

1

2

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLANGE MOUNT

NPN

Not Qualified

YES

FLAT

DUAL

AMPLIFIER

SILICON

BLS3135-10,114 by NXP Semiconductors

BLS3135-10,114

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Application: AMPLIFIER; Highest Frequency Band: S BAND;

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

BASE

SINGLE

S BAND

R-CDFM-F2

1

2

150 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLANGE MOUNT

NPN

Not Qualified

YES

FLAT

DUAL

AMPLIFIER

SILICON

BLS3135-50,114 by NXP Semiconductors

BLS3135-50,114

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Case Connection: BASE; Maximum Operating Temperature: 200 Cel; No. of Terminals: 2;

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

BASE

SINGLE

S BAND

R-CDFM-F2

1

2

200 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLANGE MOUNT

NPN

Not Qualified

YES

FLAT

DUAL

AMPLIFIER

SILICON

BLS3135-65,114 by NXP Semiconductors

BLS3135-65,114

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Package Style (Meter): FLANGE MOUNT; No. of Elements: 1;

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

BASE

SINGLE

S BAND

R-CDFM-F2

1

2

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLANGE MOUNT

NPN

Not Qualified

YES

FLAT

DUAL

AMPLIFIER

SILICON

BLT50,115 by NXP Semiconductors

BLT50,115

NXP Semiconductors

The NXP Semiconductors BLT50,115 is a RF Power BJT transistor with NPN polarity and single configuration. It features a min power gain of 10 dB, operates in the ultra high frequency band, and has a max power dissipation of 2 W. Ideal for amplifier applications, this transistor has a max operating temperature of 175°C and can handle a collector current of 0.5 A.

HIGH RELIABILITY

COLLECTOR

.5 A

6 pF

10 V

SINGLE

25

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

2 W

10 dB

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

AMPLIFIER

SILICON

MX0912B251Y,114 by NXP Semiconductors

MX0912B251Y,114

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; JESD-30 Code: R-CDFM-F2; Package Style (Meter): FLANGE MOUNT;

DIFFUSED EMITTER BALLASTING RESISTORS

BASE

20 V

SINGLE

L BAND

R-CDFM-F2

1

2

200 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLANGE MOUNT

NPN

Not Qualified

YES

FLAT

DUAL

AMPLIFIER

SILICON

MX0912B351Y,114 by NXP Semiconductors

MX0912B351Y,114

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 21 A; No. of Terminals: 2; Terminal Position: DUAL;

DIFFUSED EMITTER BALLASTING RESISTORS

BASE

21 A

20 V

SINGLE

L BAND

R-CDFM-F2

1

2

200 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLANGE MOUNT

NPN

Not Qualified

YES

FLAT

DUAL

AMPLIFIER

SILICON

MZ0912B100Y,114 by NXP Semiconductors

MZ0912B100Y,114

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: L BAND; Terminal Form: FLAT; Maximum Operating Temperature: 200 Cel;

WITH EMITTER BALLASTING RESISTORS

BASE

20 V

SINGLE

L BAND

R-CDFM-F2

1

2

200 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLANGE MOUNT

NPN

Not Qualified

YES

FLAT

DUAL

AMPLIFIER

SILICON

MZ0912B50Y,114 by NXP Semiconductors

MZ0912B50Y,114

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 3 A; Additional Features: DIFFUSED EMITTER BALLASTING RESISTORS; Package Style (Meter): FLANGE MOUNT;

DIFFUSED EMITTER BALLASTING RESISTORS

BASE

3 A

20 V

SINGLE

L BAND

R-CDFM-F2

1

2

200 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLANGE MOUNT

NPN

Not Qualified

YES

FLAT

DUAL

AMPLIFIER

SILICON

RX1214B300Y,114 by NXP Semiconductors

RX1214B300Y,114

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; No. of Elements: 1; Additional Features: WITH EMITTER BALLASTING RESISTORS;

WITH EMITTER BALLASTING RESISTORS

BASE

SINGLE

L BAND

R-CDFM-F2

1

2

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLANGE MOUNT

NPN

Not Qualified

YES

FLAT

DUAL

AMPLIFIER

SILICON

MAX2601ESA-T by Maxim Integrated

MAX2601ESA-T

Maxim Integrated

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; Maximum Collector-Emitter Voltage: 15 V; Package Style (Meter): SMALL OUTLINE;

1.2 A

15 V

SINGLE

100

ULTRA HIGH FREQUENCY BAND

R-PDSO-G8

e0

1

1

8

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

AMPLIFIER

SILICON

BDP948H6327XTSA1 by Infineon Technologies

BDP948H6327XTSA1

Infineon Technologies

Infineon's BDP948H6327XTSA1 is a PNP RF Power BJT with 45V VCE, 3A IC, and 100MHz fT. Ideal for amplifier applications, it comes in a small outline package with gull wing terminals for surface mounting.

COLLECTOR

3 A

45 V

SINGLE

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

BDP950H6327XTSA1 by Infineon Technologies

BDP950H6327XTSA1

Infineon Technologies

Infineon's BDP950H6327XTSA1 is a PNP RF Power BJT with 60V VCE, 3A IC, and 100MHz fT. Ideal for amplifier applications, it features a small outline package with gull wing terminals for surface mount assembly.

COLLECTOR

3 A

60 V

SINGLE

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

BDP948H6433XTMA1 by Infineon Technologies

BDP948H6433XTMA1

Infineon Technologies

Infineon's BDP948H6433XTMA1 is a PNP RF Power BJT with 45V VCE, 3A IC, and 100MHz fT. Ideal for amplifier applications, it comes in a small outline package with gull wing terminals for surface mount assembly.

COLLECTOR

3 A

45 V

SINGLE

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

100 MHz