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BDP948H6433XTMA1

Infineon Technologies

BDP948H6433XTMA1 by Infineon Technologies

Infineon's BDP948H6433XTMA1 is a PNP RF Power BJT with 45V VCE, 3A IC, and 100MHz fT. Ideal for amplifier applications, it comes in a small outline package with gull wing terminals for surface mount assembly.

Median Price

$0.636

Lifecycle Status

EOL

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 14 parts In-Stock

1+ parts

$0.960

100+ parts

$0.407

1k+ parts

$0.266

10k+ parts

$0.182

14

$0.960

$0.407

$0.266

$0.182

Verical

USA . 32,000 parts In-Stock

1+ parts

-

100+ parts

-

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-

10k+ parts

$0.313

32,000

-

-

-

$0.313

Distributors (In-Stock)

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Digiode

USA . 415 parts In-Stock

1+ parts

$0.684

100+ parts

-

1k+ parts

-

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-

415

$0.684

-

-

-

Rutronik

Germany . 20,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.206

20,000

-

-

-

$0.206

Vyrian

USA . 6,515 parts In-Stock

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-

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6,515

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 17,999 parts In-Stock

1+ parts

$0.441

100+ parts

$0.423

1k+ parts

$0.406

10k+ parts

-

17,999

$0.441

$0.423

$0.406

-

Corphita

USA . 212 parts In-Stock

1+ parts

$0.648

100+ parts

-

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-

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-

212

$0.648

-

-

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Microchip USA

USA . 6,615 parts In-Stock

1+ parts

$3.311

100+ parts

-

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10k+ parts

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6,615

$3.311

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Northwest PG Solutions

USA . 1,099 parts In-Stock

1+ parts

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100+ parts

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1,099

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Authorized Procurement Solutions

USA . 500 parts In-Stock

1+ parts

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1k+ parts

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500

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Robosynatics

Brazil . 500 parts In-Stock

1+ parts

-

100+ parts

$0.301

1k+ parts

$0.279

10k+ parts

$0.279

500

-

$0.301

$0.279

$0.279

Lucentia Tech

USA . 500 parts In-Stock

1+ parts

-

100+ parts

$0.301

1k+ parts

$0.279

10k+ parts

$0.279

500

-

$0.301

$0.279

$0.279

Native Components

USA . 411 parts In-Stock

1+ parts

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411

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Perfect Parts

USA . 28 parts In-Stock

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28

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Overview

Unlock the power of high-quality RF amplification with the BDP948H6433XTMA1 by Infineon Technologies. As a leading manufacturer in the industry, Infineon delivers top-notch performance and reliability in their products. This RF Power Bipolar Junction Transistor is perfect for amplifier applications, offering customers unparalleled value and benefits. Whether you're looking to boost signal strength or enhance overall performance, this transistor provides the advantages you need to take your project to the next level. Experience the difference with Infineon Technologies.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body provides good protection against external environmental factors, ensuring long-term reliability.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-power applications, making this product suitable for amplifier circuits where high power is required.

Configuration: SINGLE

The single configuration simplifies the circuit design and ensures straightforward installation.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor provides optimized performance and efficiency in amplifying signals.

Surface Mount: YES

Being surface-mounted, this transistor is easy to install on circuit boards, saving space and enabling automated assembly processes.

Package Shape: RECTANGULAR

The rectangular shape makes it easy to arrange and mount the transistor on a PCB, facilitating efficient circuit layout.

Terminal Form: GULL WING

The gull-wing terminal form allows for easy soldering onto the PCB, ensuring a reliable electrical connection.

No. of Terminals: 4

With four terminals, this transistor offers flexibility in circuit connections and allows for various configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, making it ideal for compact electronic devices.

Maximum Collector-Emitter Voltage: 45 V

The high collector-emitter voltage rating allows for operation in circuits with higher voltages, increasing the versatility of this transistor.

Transistor Element Material: SILICON

Silicon transistors offer high performance, low noise, and good thermal stability, making them suitable for a wide range of applications.

Maximum Collector Current (IC): 3 A

With a maximum collector current of 3 A, this transistor can handle high current loads, making it suitable for power amplification applications.

Terminal Position: DUAL

The dual terminal position allows for easy integration into various circuit layouts, providing flexibility in design.

Case Connection: COLLECTOR

The collector case connection simplifies the circuit design and ensures proper thermal management for reliable operation.

Nominal Transition Frequency (fT): 100 MHz

The high nominal transition frequency of 100 MHz indicates that this transistor can switch signals quickly, making it suitable for high-frequency applications.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) BDP948H6433XTMA1 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

45 V

Configuration:

JESD-30 Code:

R-PDSO-G4

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BDP948H6433XTMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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