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SD1728D

STMicroelectronics

SD1728D by STMicroelectronics

SD1728D by STMicroelectronics is a NPN RF BJT transistor with 55V VCEO, 40A IC, and 360pF Cob. Ideal for high-frequency amplifier applications due to its single configuration and flat terminal form. Operates at up to 200 °C with a flange mount package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,181 parts In-Stock

1+ parts

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2,181

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Digiode

USA . 1,805 parts In-Stock

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1,805

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Anansix

USA . 1,104 parts In-Stock

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1,104

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,245 parts In-Stock

1+ parts

$1.135

100+ parts

-

1k+ parts

$1.022

10k+ parts

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2,245

$1.135

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$1.022

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MKK Technologies

India . 669 parts In-Stock

1+ parts

$2.135

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669

$2.135

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DigiPath Technology Company

USA . 669 parts In-Stock

1+ parts

$2.135

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669

$2.135

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Corphita

USA . 2,236 parts In-Stock

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2,236

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Parana Technologies

USA . 238 parts In-Stock

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$1.357

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238

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$1.357

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Overview

Experience top-quality performance with the SD1728D RF Power Bipolar Junction Transistor by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics delivers exceptional reliability and precision in every product. Ideal for amplifier applications, this NPN transistor offers high-frequency band capabilities, ensuring optimal performance. With a maximum collector current of 40 A and maximum collector-emitter voltage of 55 V, the SD1728D provides unmatched value and benefits to customers seeking superior quality components for their projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering high performance and efficiency.

Configuration: SINGLE

Simplifies circuit design and installation, making it easier to integrate into different systems.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, ensuring optimal performance when used in amplifier circuits.

Surface Mount: YES

Allows for easy and efficient installation onto circuit boards, saving time and effort during assembly.

Package Shape: ROUND

Facilitates better heat dissipation and helps in creating a compact layout for the circuit design.

Terminal Form: FLAT

Makes it easier to solder and connect the transistor to other components in the circuit.

Highest Frequency Band: HIGH FREQUENCY BAND

Enables the transistor to operate efficiently at high frequencies, making it suitable for RF power applications.

No. of Terminals: 4

Provides multiple connection points for input and output signals, enhancing versatility in circuit design.

Package Style (Meter): FLANGE MOUNT

Facilitates secure mounting and installation of the transistor, ensuring reliable performance in different environments.

Maximum Operating Temperature: 200 °C

Can withstand high temperatures during operation, ensuring reliable performance in challenging conditions.

Maximum Collector-Base Capacitance: 360 pF

Low capacitance helps in reducing signal distortion and improving overall performance in high-frequency applications.

Maximum Collector-Emitter Voltage: 55 V

Withstand high voltage levels, making it suitable for power applications where voltage regulation is crucial.

Transistor Element Material: SILICON

Silicon transistors offer high reliability, low leakage current, and excellent performance characteristics, making them ideal for various applications.

Maximum Collector Current (IC): 40 A

Capable of handling high current levels, making it suitable for power amplifier applications that require high output power.

Terminal Position: RADIAL

Simplifies the connection and soldering process, providing a more secure and stable electrical connection in the circuit.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) SD1728D attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

360 pF

Maximum Collector-Emitter Voltage:

55 V

Configuration:

Highest Frequency Band:

HIGH FREQUENCY BAND

JESD-30 Code:

O-PRFM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

SD1728D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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