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SD1727(THX15)

STMicroelectronics

SD1727(THX15) by STMicroelectronics

SD1727(THX15) by STMicroelectronics is an NPN RF power BJT designed for very high frequency applications. It features a max collector current of 10 A, a collector-emitter voltage of 55 V, and operates in a round plastic/epoxy package. Ideal for RF amplification in communication systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,132 parts In-Stock

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Digiode

USA . 1,194 parts In-Stock

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Anansix

USA . 748 parts In-Stock

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748

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 201 parts In-Stock

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$1.731

100+ parts

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$1.558

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201

$1.731

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$1.558

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MKK Technologies

India . 40 parts In-Stock

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$3.256

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40

$3.256

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DigiPath Technology Company

USA . 40 parts In-Stock

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$3.256

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40

$3.256

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Corphita

USA . 3,387 parts In-Stock

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Parana Technologies

USA . 2,199 parts In-Stock

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$2.070

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2,199

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$2.070

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Kepictronics

USA . 177 parts In-Stock

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Overview

Unlock the potential of your RF applications with the SD1727(THX15) from STMicroelectronics. Designed for exceptional performance, this NPN power transistor delivers outstanding efficiency and reliability, making it ideal for high-frequency operations in communication systems and industrial equipment. With STMicroelectronics' reputation for innovation and quality, you can trust that the SD1727 offers unparalleled value, ensuring your projects achieve optimal results without compromise.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material offers durability and protection against environmental factors, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN configuration is popular for general amplification and switching applications, providing easier integration into circuits.

Configuration: SINGLE

A single configuration simplifies design and implementation, making the product easy to work with in various circuit layouts.

Package Shape: ROUND

The round shape promotes uniform thermal dissipation and ease of mounting, enhancing reliability in RF applications.

Terminal Form: FLAT

Flat terminals allow for better contact and stability during soldering, reducing the risk of connection issues.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Designed to operate in the very high frequency band, this transistor is ideal for RF applications, ensuring high performance in communications.

No. of Terminals: 4

The four terminals provide necessary connectivity options for efficient integration into complex electronic circuits.

Package Style (Meter): POST/STUD MOUNT

The post/stud mount style provides secure attachment and improved heat sinking capabilities, making it suitable for high-power applications.

Maximum Collector-Base Capacitance: 220 pF

A maximum collector-base capacitance of 220 pF minimizes signal distortion and enhances frequency response, improving overall performance.

Maximum Collector-Emitter Voltage: 55 V

With a maximum collector-emitter voltage of 55 V, this transistor ensures reliable operation in a wide range of applications.

Transistor Element Material: SILICON

Silicon material enhances thermal stability and electrical performance, ensuring consistent operation under varying conditions.

Maximum Collector Current (IC): 10 A

A high maximum collector current rating of 10 A enables the transistor to handle significant power loads, ideal for robust applications.

Terminal Position: RADIAL

Radial terminal positioning facilitates easy placement on circuit boards, supporting efficient layout and design flexibility.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) SD1727(THX15) attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

220 pF

Maximum Collector-Emitter Voltage:

55 V

Configuration:

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

O-PRPM-F4

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Element Material:

SILICON

Trade Compliance

SD1727(THX15) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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