Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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SD1728F by STMicroelectronics is a NPN RF Power BJT with 55V VCEO, 40A IC, and 360pF Cob. Ideal for high-frequency amplifier applications, it features a plastic/epoxy package, flat terminals, and operates up to 200 °C. Suitable for surface mount with flange mount style.
Median Price
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3
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Vyrian
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Anansix
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$1.521
$1.369
MKK Technologies
$2.860
DigiPath Technology Company
Corphita
Parana Technologies
$1.818
The plastic/epoxy package body material provides durability and protection for the transistor, ensuring a longer lifespan and reliable performance.
NPN transistors are commonly used in amplification circuits, making this product suitable for amplifier applications.
The single configuration simplifies circuit design and assembly, making it easier to work with this transistor in amplifier applications.
The surface mount capability allows for easy and compact placement on circuit boards, saving space and facilitating mass production.
The round package shape provides easy handling and efficient heat dissipation, ensuring optimal performance in amplifier applications.
The flat terminal form allows for secure connections and easy soldering onto circuit boards, enhancing the reliability of the transistor.
The high frequency band capability makes this transistor suitable for high-speed and high-frequency amplifier applications, delivering excellent performance.
Having 4 terminals allows for versatile connection options and flexibility in circuit design, making this transistor adaptable to various amplifier configurations.
The flange mount package style provides stability and easy mounting on heat sinks or other components, enhancing the thermal management of the transistor.
The high maximum operating temperature of 200 °C ensures reliable performance even under demanding conditions, making this transistor suitable for a wide range of applications.
The low collector-base capacitance of 360 pF minimizes signal distortion and improves the overall performance of the amplifier circuit.
The high maximum collector-emitter voltage of 55 volts allows for use in a wide range of amplifier circuits, offering versatility and compatibility.
Silicon is a common semiconductor material known for its reliability and efficiency in electronic devices, ensuring the high performance and durability of this transistor.
With a maximum collector current of 40 amps, this transistor can handle high power levels, making it suitable for demanding amplifier applications where high current is required.
The radial terminal position allows for easy connections and layout in circuit designs, ensuring efficient signal flow and reliable operation in amplifier applications.
RF Power Bipolar Junction Transistors (BJT) SD1728F attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics
Maximum Collector Current (IC):
Maximum Collector-Base Capacitance:
Maximum Collector-Emitter Voltage:
Configuration:
Highest Frequency Band:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Qualification:
Surface Mount:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
SD1728F Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.
President, CEO
Jean-Marc Chery
President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience
Lorenzo Grandi
President, Sales & Marketing
Jerome Roux
Castelletto
Fabrication
Fab Initiation
1968
Italy
Wafer Capacity
SGFAB AMK 6
2000
Singapore
29,000
AG200
Agrate Brianza
14,000
RST 8
France
Rousset
35,000
Crolles 1
1993
Crolles
30,000
Crolles 2-ext. mod 5
Crolles 2-ext. mod 2
2022
Crolles 2-ext. mod 3
2023
Crolles 2
2004
28,000
1985
SiC Fab
2006
Sweden
Norrköping
10,000
Fab 3
2005
Tours
2,000
Fab 1 & Fab 2
1978
55,000
Fab 2
1997
Catania
SGFAB-AMK 6E
2003
145,000
SGFAB-AMJ 9
1984
152,000
AG300 (R3)
1980
25,000
1987
34,000
AG300
2024
Crolles 2-ext. mod 1
2020
Fab 1 6-inch fab
2013
11,000
SiC 6-inch line
2021
2,500
200mm GaN
2018
SGFAB-AMK 8
2001
Crolles 2- JV Fab
SGFAB-AMK 6
2016
38,125
SGFAB-AMK 2E
2010
20,000
Silicon Carbide A.B.
SiC wafer/EPI Fab
SiC Device Fab
2025
LM555CN
Rochester Electronics
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Shape: RECTANGULAR; Surface Mount: NO; No. of Functions: 1;
OPA2277UA
Burr-Brown Corporation
OPERATIONAL AMPLIFIER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
BAT54SLT1G
Onsemi
BAT54SLT1G by Onsemi is a fast recovery Schottky diode with 2 elements in series connected configuration. It has a max reverse recovery time of 0.005 us and a max forward voltage of 0.8 V. Ideal for applications requiring high-speed rectification, it operates b/w -55 to 150 °C and can handle a max output current of 0.2 A.
LD1117S33CTR
STMicroelectronics
STMicroelectronics LD1117S33CTR is a fixed positive single output LDO regulator with a nominal output voltage of 3.3V and max output current of 1.3A. It operates within an input voltage range of 4.75V to 15V, making it suitable for various applications requiring stable voltage regulation in compact designs. The device features low dropout voltage of 1.3V, high temperature operation up to 125°C, and small outline package style for space-constrained PCB layouts.
1N4148
Texas Instruments
1N4148 by Texas Instruments is a rectifier diode with max reverse recovery time of 0.004 us and max forward voltage of 1V. Ideal for applications requiring low reverse current such as signal demodulation circuits. Operates at max temp of 200°C, making it suitable for high-temperature environments.
FSMLF327
Fox Electronics
FSMLF327 by Fox Electronics is a crystal oscillator with 20 ppm frequency tolerance, 144% stability, and 50000 ohm series resistance. Ideal for applications requiring precise timing such as communication systems, industrial automation, and consumer electronics. Operating temperature range from -40 to 85 °C.
Jgd Semiconductors
RECTIFIER DIODE; Surface Mount: NO; Maximum Operating Temperature: 175 Cel; Maximum Reverse Recovery Time: .004 us; Maximum Non Repetitive Peak Forward Current: .5 A; Maximum Forward Voltage (VF): 1 V;
LL4148
Weitron Technology
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
2N7002
Dc Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 1; Terminal Form: GULL WING;
BAV99-7-F
Multicomp Pro
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Vishay Intertechnology
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BSS138
Changzhou Galaxy Century Microelectronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Minimum DS Breakdown Voltage: 50 V; Maximum Operating Temperature: 150 Cel;
2N2222A
Aeroflex/metelics
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Package Shape: ROUND; Transistor Application: SWITCHING;
Vpt Components
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Maximum Power Dissipation Ambient: .5 W;
1N4148W-T
Rectron
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS138BK,215
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Additional Features: LOGIC LEVEL COMPATIBLE; Maximum Operating Temperature: 150 Cel;
BAV99
FDV304P
The Onsemi FDV304P is a P-CHANNEL FET with 25V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 0.46A and an Operating Temperature range of -55 to 150 °C. The transistor comes in a PLASTIC/EPOXY package with GULL WING terminals, suitable for surface mount configurations.
BSS138W-7-F
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Transistor Element Material: SILICON; No. of Elements: 1;
MMBT2222ALT1G
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
AT-64000-GP4
Broadcom
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): .2 A; Minimum DC Current Gain (hFE): 20;
ISL73096RHVF
Renesas Electronics
NPN AND PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .0113 A; Additional Features: LOW NOISE;
Microsemi
Microsemi's 2005 is a NPN RF Power BJT with CERAMIC, METAL-SEALED COFIRED package. It operates in L BAND with max IC of 1 A, suitable for amplifier applications. This single configuration transistor has flat terminals and can withstand up to 200 °C operating temperature.
SD4017
SD4017 by STMicroelectronics is a NPN RF BJT transistor with 6 terminals, suitable for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It has a max power dissipation of 88W, operates at up to 200 °C, and can handle a collector current of 0.06A.
MRF20060R
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 8 A; Transistor Element Material: SILICON;
934033550114
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 21 A; No. of Elements: 1; Transistor Application: AMPLIFIER;
MRB11040W
MRB11040W by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max collector current of 3 A, operates up to 200 °C, and offers a min power gain of 10 dB in the L band. Its ceramic, metal-sealed package ensures durability in demanding environments.
2SC2510A
Toshiba
Toshiba's 2SC2510A is an NPN RF BJT with a max. collector current of 20A and max. power dissipation of 250W, ideal for high-frequency amplifier applications. It features a ceramic-metal-sealed co-fired package, flat terminals, and operates at up to 175°C, making it suitable for flange mount configurations in the high-frequency band.
PTB20017
Infineon Technologies
NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Collector Current (IC): 25 A; JESD-30 Code: R-CDFM-F4; JESD-609 Code: e3;
MRF224
New Jersey Semiconductor Products
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 7 A; Qualification: Not Qualified;
MSC82304
STMicroelectronics' MSC82304 is a NPN RF BJT with 11.5W power dissipation, hFE of 30, and 0.6A collector current. Ideal for S Band applications like amplifiers due to its ceramic-metal package and high operating temperature of 200 °C.
MSC82010
STMicroelectronics' MSC82010 is a NPN BJT transistor with 35W power dissipation, suitable for amplifier applications in L Band frequency. Featuring a max collector current of 1.5A and operating temperature up to 200 °C, it has a ceramic-metal-sealed co-fired package body ideal for flange mount installations.
BLS3135-20TRAY
NPN; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Package Shape: RECTANGULAR; Transistor Application: AMPLIFIER;
BLW89
BLW89 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications, featuring a max power dissipation of 9.6 W and a nominal transition frequency of 850 MHz. It operates in the ultra-high frequency band with a min power gain of 12 dB. Encased in a ceramic, metal-sealed package, it ensures reliability up to 200 °C.
BLV30
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1150 MHz; Maximum Collector Current (IC): 1.5 A; Terminal Position: RADIAL;
PVB42004X
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1 A; Qualification: Not Qualified; Package Style (Meter): FLANGE MOUNT;
MSC81350M
STMicroelectronics' MSC81350M is an NPN BJT transistor for switching applications. With a max power dissipation of 720W, it operates in L Band frequency with 19.8A collector current. The ceramic-metal package and flange mount make it suitable for high-power RF amplifiers.
2N5642
Solitron Devices
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;
BLY91A
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .75 A; Maximum Collector-Emitter Voltage: 36 V; Transistor Element Material: SILICON;
BLV94
BLV94 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a min power gain of 6 dB, operates at ultra-high frequencies, and supports a max collector current of 3 A. Its robust ceramic-metal sealed package ensures reliability in demanding environments.
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SD1726
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 233 W; Maximum Collector Current (IC): 20 A; Minimum DC Current Gain (hFE): 18;
SD1727
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 233 W; Maximum Collector Current (IC): 10 A; Maximum Collector-Base Capacitance: 220 pF;
SD1727(THX15)
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 10 A; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;
SD1728
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 330 W; Maximum Collector Current (IC): 40 A; Highest Frequency Band: HIGH FREQUENCY BAND;
SD1728-15
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 40 A; JESD-30 Code: O-PRFM-F4; Terminal Position: RADIAL;
SD1728C
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 40 A; Package Shape: ROUND; Package Body Material: PLASTIC/EPOXY;
SD1728D
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 40 A; No. of Terminals: 4; JESD-30 Code: O-PRFM-F4;
SD1728E
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 40 A; JESD-30 Code: O-PRFM-F4; Package Body Material: PLASTIC/EPOXY;
SD1729
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 175 W; Maximum Collector Current (IC): 12 A; JESD-30 Code: O-PRFM-F4;
SD1729(TH416)
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 12 A; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Terminal Form: FLAT;
SD1730
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 320 W; Maximum Collector Current (IC): 16 A; Maximum Operating Temperature: 200 Cel;
SD1730(TH560)
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 320 W; Maximum Collector Current (IC): 16 A; No. of Terminals: 4;
SD1731
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 233 W; Maximum Collector Current (IC): 20 A; Qualification: Not Qualified;
SD1731-14
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 257 W; Maximum Collector Current (IC): 20 A; Package Body Material: PLASTIC/EPOXY;
SD1731(TH562)
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 233 W; Maximum Collector Current (IC): 20 A; Terminal Position: RADIAL;
SD1732
NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): .85 A; Maximum Collector-Emitter Voltage: 25 V;
SD1732(TDS595)
NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Collector Current (IC): 2.6 A; Package Shape: RECTANGULAR; No. of Elements: 2;
SD1733
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 127 W; Maximum Collector Current (IC): 3.25 A; Highest Frequency Band: VERY HIGH FREQUENCY BAND;
Asi Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 233 W; Maximum Collector Current (IC): 10 A; Transistor Application: AMPLIFIER;
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