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SD1733

STMicroelectronics

SD1733 by STMicroelectronics

SD1733 by STMicroelectronics is a NPN RF Power BJT with 55V VCEO, 3.25A IC, and 127W Ptot. Ideal for amplifier applications in the VHF band due to its high frequency capabilities and silicon element material. Package style is post/stud mount with 4 terminals in a round shape.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,893 parts In-Stock

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4,893

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Digiode

USA . 4,156 parts In-Stock

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4,156

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Anansix

USA . 2,521 parts In-Stock

1+ parts

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2,521

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 578 parts In-Stock

1+ parts

$1.705

100+ parts

-

1k+ parts

$1.534

10k+ parts

-

578

$1.705

-

$1.534

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MKK Technologies

India . 768 parts In-Stock

1+ parts

$3.206

100+ parts

-

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768

$3.206

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DigiPath Technology Company

USA . 768 parts In-Stock

1+ parts

$3.206

100+ parts

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768

$3.206

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Corphita

USA . 2,930 parts In-Stock

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2,930

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Parana Technologies

USA . 435 parts In-Stock

1+ parts

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$2.038

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435

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$2.038

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Overview

Experience superior performance and reliability with the SD1733 RF Power BJT from STMicroelectronics. As a trusted manufacturer in the industry, STMicroelectronics delivers cutting-edge technology for various applications such as amplifiers. The SD1733 boasts very high frequency band capabilities, a maximum power dissipation of 127W, and a collector-emitter voltage of 55V. Customers can expect excellent quality and value with this NPN transistor, making it the ideal choice for demanding amplifier projects. Trust STMicroelectronics to provide innovative solutions for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides a lightweight and durable housing for the transistor, making it ideal for various applications.

Polarity or Channel Type: NPN

The NPN polarity or channel type allows for high efficiency in amplification applications, ensuring reliable performance.

Configuration: SINGLE

The single configuration simplifies the design and implementation of the transistor, making it a cost-effective and straightforward choice for amplification purposes.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor provides optimized performance and efficiency in amplifying signals.

Package Shape: ROUND

The round package shape allows for easy installation and integration into various electronic devices or circuits.

Terminal Form: FLAT

The flat terminal form ensures secure connections and facilitates efficient heat dissipation, enhancing the overall reliability of the transistor.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

With very high frequency band capabilities, this transistor is suitable for applications requiring fast signal processing and high-speed operation.

No. of Terminals: 4

The 4 terminals provide flexibility in circuit connections and enable the transistor to handle complex amplification tasks with ease.

Maximum Power Dissipation (Abs): 127 W

The high maximum power dissipation of 127W ensures that the transistor can handle heavy loads and operate efficiently under demanding conditions.

Package Style (Meter): POST/STUD MOUNT

The post/stud mount package style allows for secure mounting and easy installation in various electronic setups.

Minimum DC Current Gain (hFE): 19

The minimum DC current gain of 19 indicates high amplification capabilities, ensuring effective signal amplification in a wide range of applications.

Maximum Operating Temperature: 200 °C

With a maximum operating temperature of 200 °C, this transistor can withstand high temperatures and operate reliably in challenging environments.

Maximum Collector-Base Capacitance: 100 pF

The low maximum collector-base capacitance of 100 pF minimizes signal distortion and ensures accurate amplification in high-frequency circuits.

Maximum Collector-Emitter Voltage: 55 V

The high maximum collector-emitter voltage of 55V allows the transistor to handle high voltage signals with ease, making it suitable for a wide range of applications.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures high reliability, low noise, and excellent performance characteristics, making it a preferred choice for amplification tasks.

Maximum Collector Current (IC): 3.25 A

With a maximum collector current of 3.25A, this transistor can handle high current levels, making it suitable for power amplification applications.

Terminal Position: RADIAL

The radial terminal position facilitates easy connections and ensures efficient signal flow within the transistor, enhancing its overall performance.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) SD1733 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

100 pF

Maximum Collector-Emitter Voltage:

55 V

Configuration:

Minimum DC Current Gain (hFE):

19

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

O-PRPM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

SD1733 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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