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SD1727

STMicroelectronics

SD1727 by STMicroelectronics

SD1727 by STMicroelectronics is a NPN RF BJT transistor with 4 terminals, suitable for amplifier applications in the VHF band. It has a max power dissipation of 233W, max collector-emitter voltage of 55V, and operates up to 200 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,840 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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2,840

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-

-

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Digiode

USA . 2,600 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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2,600

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Anansix

USA . 1,456 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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1,456

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,045 parts In-Stock

1+ parts

$0.753

100+ parts

-

1k+ parts

$0.678

10k+ parts

-

2,045

$0.753

-

$0.678

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MKK Technologies

India . 529 parts In-Stock

1+ parts

$1.417

100+ parts

-

1k+ parts

-

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529

$1.417

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DigiPath Technology Company

USA . 529 parts In-Stock

1+ parts

$1.417

100+ parts

-

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-

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529

$1.417

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Ampacity Inc.

Singapore . 986 parts In-Stock

1+ parts

$60.050

100+ parts

-

1k+ parts

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986

$60.050

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-

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Component Stockers USA

USA . 310 parts In-Stock

1+ parts

$99.990

100+ parts

-

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10k+ parts

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310

$99.990

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Corphita

USA . 2,522 parts In-Stock

1+ parts

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2,522

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Parana Technologies

USA . 835 parts In-Stock

1+ parts

-

100+ parts

$0.901

1k+ parts

-

10k+ parts

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835

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$0.901

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Overview

The SD1727 by STMicroelectronics is a top-of-the-line RF Power BJT transistor that offers unmatched quality and reliability. Ideal for amplifier applications in the very high-frequency band, this NPN transistor features a maximum power dissipation of 233W and a maximum collector-emitter voltage of 55V. With a minimum DC current gain of 18 and a terminal finish of gold, this transistor provides exceptional performance in a compact and durable package. Trust STMicroelectronics to deliver cutting-edge technology that meets your needs with precision and excellence. Upgrade your designs with the SD1727 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy construction provides durability and ensures reliable performance in various operating conditions.

Polarity or Channel Type: NPN

NPN configuration allows for easy integration into existing electronic circuits and offers high efficiency amplification.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity in setups.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in signal amplification.

Package Shape: ROUND

Round package shape facilitates easy mounting and handling during assembly.

Terminal Form: FLAT

Flat terminal form allows for secure connections and efficient heat dissipation.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Very high frequency band capability enables this transistor to operate efficiently in high-frequency applications.

No. of Terminals: 4

Four terminals provide versatile connectivity options and compatibility with different circuit configurations.

Maximum Power Dissipation (Abs): 233 W

High power dissipation capacity ensures reliable operation and prevents overheating in demanding usage scenarios.

Package Style (Meter): POST/STUD MOUNT

Post/stud mount package style offers secure mounting options and ease of installation in various setups.

Minimum DC Current Gain (hFE): 18

Minimum DC current gain of 18 ensures efficient amplification and signal processing capabilities.

Maximum Operating Temperature: 200 °C

High maximum operating temperature of 200 °C allows for operation in a wide range of thermal conditions.

Maximum Collector-Base Capacitance: 220 pF

Low collector-base capacitance of 220 pF enhances high-frequency performance and minimizes signal distortion.

Maximum Collector-Emitter Voltage: 55 V

Maximum collector-emitter voltage of 55 V provides a wide voltage range for various applications without risking damage.

Transistor Element Material: SILICON

Silicon material offers high reliability, efficiency, and performance, making it an ideal choice for diverse electronic applications.

Maximum Collector Current (IC): 10 A

High collector current capacity of 10 A enables this transistor to handle large current loads efficiently.

Terminal Finish: GOLD

Gold terminal finish ensures excellent conductivity, corrosion resistance, and longevity for reliable signal transmission.

Terminal Position: RADIAL

Radial terminal position facilitates easy connections and allows for efficient heat dissipation in a circuit.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) SD1727 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

220 pF

Maximum Collector-Emitter Voltage:

55 V

Configuration:

Minimum DC Current Gain (hFE):

18

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

O-PRPM-F4

JESD-609 Code:

e4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

GOLD

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

SD1727 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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