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MAX2601ESA+T

Analog Devices

MAX2601ESA+T by Analog Devices

MAX2601ESA+T by Analog Devices is a NPN BJT transistor with 10 terminals, operating at 150 °C. It has a max collector-emitter voltage of 15V and can handle a collector current of 1.2A. Ideal for ultra-high frequency band amplification applications in surface-mount designs.

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3

In-Stock Inventory

1k+

MAX2601ESA+T by Analog Devices
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Vyrian

USA . 6,426 parts In-Stock

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Digiode

USA . 1,740 parts In-Stock

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1,740

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Anansix

USA . 1,428 parts In-Stock

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1,428

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Distributors (Availability)

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MARBEL Systems

Belgium . 618 parts In-Stock

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$0.897

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618

$0.897

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Texas Native Microelectronics

USA . 1,440 parts In-Stock

1+ parts

$1.031

100+ parts

$0.990

1k+ parts

$0.959

10k+ parts

$0.907

1,440

$1.031

$0.990

$0.959

$0.907

Kenton Components

USA . 500 parts In-Stock

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$1.237

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$1.089

500

$1.237

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$1.089

Qasali Group International

UK . 429 parts In-Stock

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$2.784

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$2.589

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$2.450

429

$2.784

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$2.589

$2.450

AZTECH Wire

Italy . 897 parts In-Stock

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$6.733

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897

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One Stop Electronics

USA . 2,140 parts In-Stock

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$12.050

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$12.050

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Microchip USA

USA . 6,578 parts In-Stock

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$24.668

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$24.668

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Semicontronic

India . 970 parts In-Stock

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$36.050

100+ parts

$35.149

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$34.968

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970

$36.050

$35.149

$34.968

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Ampacity Inc.

Singapore . 1,363 parts In-Stock

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$60.050

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1,363

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QUARKTWIN TECHNOLOGY LTD

USA . 26,855 parts In-Stock

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Corphita

USA . 2,485 parts In-Stock

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Overview

Elevate your RF power amplification with the MAX2601ESA+T by Analog Devices, a top-of-the-line NPN transistor that delivers unparalleled performance and reliability. Manufactured with precision and expertise, this transistor is designed for the ultra-high frequency band, making it ideal for amplifier applications. With its small outline package and gull wing terminals, installation is a breeze. Experience seamless operation at temperatures up to 150 °C, ensuring long-term functionality. Trust Analog Devices to deliver quality products that exceed expectations, providing you with the value and benefits you deserve.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, suitable for various applications and environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification applications, offering reliable performance.

Configuration: SINGLE

Simplified setup for straightforward circuit integration.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring optimal performance in such applications.

Surface Mount: YES

Facilitates easy placement and soldering, ideal for modern PCB designs.

Package Shape: RECTANGULAR

Efficient use of space on the PCB, allowing for compact designs.

Terminal Form: GULL WING

Ensures secure connections and efficient heat dissipation, contributing to the reliability of the transistor.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Suitable for high-frequency applications, ensuring excellent signal integrity.

No. of Terminals: 10

Provides versatility in connections and applications, accommodating various circuit designs.

Package Style (Meter): SMALL OUTLINE

Compact package design for space-saving and efficient PCB layout.

Minimum DC Current Gain (hFE): 100

High DC current gain ensures efficient signal amplification and performance.

Maximum Operating Temperature: 150 °C

Suitable for operation in a wide temperature range, making it versatile for different environments.

Maximum Collector-Emitter Voltage: 15 V

Withstands high voltage levels, ensuring reliable operation in various voltage conditions.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability, making it a popular choice for transistors.

Maximum Collector Current (IC): 1.2 A

Able to handle high currents, suitable for powerful amplification applications.

Terminal Finish: Matte Tin (Sn) - annealed

Provides good solderability and corrosion resistance, ensuring long-term reliability.

Terminal Position: DUAL

Dual terminal position allows for flexible mounting options, accommodating different PCB layouts.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures safe and reliable reflow soldering process, maintaining the integrity of the transistor.

Peak Reflow Temperature °C: 260

Withstands high reflow temperatures, suitable for lead-free soldering processes.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) MAX2601ESA+T attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Analog Devices

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

100

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G10

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

10

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MAX2601ESA+T Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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