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BLW96

New Jersey Semiconductor Products

BLW96 by New Jersey Semiconductor Products

NPN; Nominal Transition Frequency (fT): 245 MHz; Maximum Collector Current (IC): 12 A; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 55 V; No. of Elements: 1;

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Lifecycle Status

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Corohmni

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Technical Specifications

RF Power Bipolar Junction Transistors (BJT) BLW96 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from New Jersey Semiconductor Products

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

55 V

No. of Elements:

1

Polarity or Channel Type:

NPN

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BLW96 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-14-446-3021, 5961144463021, 5961-99-773-9053, 5961997739053

NIIN

144463021, 997739053

Manufacturer Highlights

New Jersey Semiconductor Products

New Jersey Semiconductor has been designing, manufacturing, and producing highly reliable electronic devices since 1957. Our mission is to supply you with high quality, cost effective discrete devices for commercial, industrial, and military applications. New Jersey Semiconductor's quality management system has been verified to conform with ISO 9001:2015 standards.

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Authentic purchasing experiences

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