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SD1490

STMicroelectronics

SD1490 by STMicroelectronics

SD1490 by STMicroelectronics is a NPN RF BJT with 4 terminals, suitable for amplifier applications in the UHF band. It has a max power dissipation of 135W, max collector current of 8A, and operates up to 200 °C. The package is surface mountable with a flange mount style and flat terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,391 parts In-Stock

1+ parts

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4,391

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Anansix

USA . 2,233 parts In-Stock

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2,233

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Vyrian

USA . 859 parts In-Stock

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859

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,153 parts In-Stock

1+ parts

$0.686

100+ parts

-

1k+ parts

$0.618

10k+ parts

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1,153

$0.686

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$0.618

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MKK Technologies

India . 2,222 parts In-Stock

1+ parts

$1.291

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2,222

$1.291

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DigiPath Technology Company

USA . 2,222 parts In-Stock

1+ parts

$1.291

100+ parts

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2,222

$1.291

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Corphita

USA . 3,897 parts In-Stock

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3,897

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Parana Technologies

USA . 1,676 parts In-Stock

1+ parts

-

100+ parts

$0.821

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1,676

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$0.821

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Overview

Unleash the power of innovation with the SD1490 RF Power BJT by STMicroelectronics. Designed to deliver superior performance and reliability, this transistor is a game-changer in the world of amplifiers. Whether you're looking to amplify signals or enhance communication systems, the SD1490 ensures seamless operation in the ultra-high frequency band. With a maximum power dissipation of 135W and a collector-emitter voltage of 30V, this transistor offers unmatched value and efficiency for your projects. Elevate your designs with the SD1490 and experience the difference that quality engineering can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliability and durability in various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits due to their high input impedance and low output impedance, making them suitable for amplification applications.

Configuration: SINGLE

Simplifies circuit design and offers ease of use for applications requiring a single transistor configuration.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance and efficiency in amplifying signals.

Surface Mount: YES

Enables easy installation on PCBs, saving space and allowing for automated assembly processes.

Package Shape: RECTANGULAR

Facilitates efficient placement and mounting on circuit boards, optimizing space utilization.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Ideal for applications requiring high-frequency signal amplification, providing excellent performance in ultra-high frequency ranges.

Maximum Power Dissipation (Abs): 135 W

Capable of handling high power levels, making it suitable for demanding amplifier applications.

Package Style (Meter): FLANGE MOUNT

Allows for secure and stable mounting on heatsinks or other components to dissipate heat effectively.

Minimum DC Current Gain (hFE): 10

Ensures consistent and reliable amplification of input signals with a minimum gain level of 10.

Maximum Operating Temperature: 200 °C

Can operate efficiently in high-temperature environments, suitable for applications where temperature fluctuations may occur.

Maximum Collector-Base Capacitance: 80 pF

Low capacitance value minimizes signal loss and distortion, ensuring high-fidelity amplification.

Maximum Collector-Emitter Voltage: 30 V

Provides a safe voltage rating for the transistor, protecting it from potential voltage spikes or overloads.

Transistor Element Material: SILICON

Offers high reliability and performance, commonly used in power transistors for efficient signal amplification.

Maximum Collector Current (IC): 8 A

Capable of handling high current levels, making it suitable for power amplifier applications.

Terminal Finish: NICKEL

Enhances conductivity and corrosion resistance for reliable terminal connections.

Terminal Position: DUAL

Provides flexibility in circuit design and allows for easy connection of external components.

Case Connection: EMITTER

Clearly indicates the connection point for the emitter terminal, simplifying circuit design and installation.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) SD1490 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

HIGH EFFICIENCY

Case Connection:

EMITTER

Maximum Collector Current (IC):

8 A

Maximum Collector-Base Capacitance:

80 pF

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

10

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDFM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

NICKEL

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

SD1490 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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