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SD1423

STMicroelectronics

SD1423 by STMicroelectronics

SD1423 by STMicroelectronics is an NPN RF Power BJT with 6 terminals and a max power dissipation of 29W. It operates in the ultra-high frequency band, suitable for amplifier applications. With a max collector-emitter voltage of 25V and max collector current of 2.5A, it offers high performance in a rectangular package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,961 parts In-Stock

1+ parts

-

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3,961

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Digiode

USA . 945 parts In-Stock

1+ parts

-

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-

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945

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Anansix

USA . 882 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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882

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Speed Components Ltd

Israel . 3 parts In-Stock

1+ parts

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3

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 137 parts In-Stock

1+ parts

$0.779

100+ parts

$0.771

1k+ parts

$0.740

10k+ parts

-

137

$0.779

$0.771

$0.740

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IDEA Electronic Components Group

UK . 1,112 parts In-Stock

1+ parts

$1.678

100+ parts

-

1k+ parts

$1.510

10k+ parts

-

1,112

$1.678

-

$1.510

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MKK Technologies

India . 1,525 parts In-Stock

1+ parts

$3.156

100+ parts

-

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1,525

$3.156

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DigiPath Technology Company

USA . 1,525 parts In-Stock

1+ parts

$3.156

100+ parts

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10k+ parts

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1,525

$3.156

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Parana Technologies

USA . 1,098 parts In-Stock

1+ parts

-

100+ parts

$2.006

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1,098

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$2.006

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Corphita

USA . 570 parts In-Stock

1+ parts

-

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570

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Overview

Experience unparalleled performance and reliability with the SD1423 RF Power Bipolar Junction Transistor by STMicroelectronics. As a leader in the semiconductor industry, STMicroelectronics is known for delivering top-notch quality products. The SD1423 is ideal for amplifier applications in the ultra-high-frequency band, offering customers superior value and benefits. With its single configuration, high power dissipation, and nickel terminal finish, this transistor ensures optimal functionality and efficiency. Trust STMicroelectronics to provide you with cutting-edge solutions for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

Allows for easy integration with other NPN components in a circuit.

Configuration: SINGLE

Simplified design and ease of use in amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplification tasks, ensuring optimal performance in such applications.

Surface Mount: YES

Enables easy and efficient PCB assembly, saving time and effort in production.

Package Shape: RECTANGULAR

Provides a compact footprint for space-constrained designs.

Terminal Form: FLAT

Facilitates soldering and connection, ensuring a secure and reliable electrical connection.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Capable of handling high-frequency signals with precision and accuracy.

No. of Terminals: 6

Offers flexibility in circuit connections and configurations.

Maximum Power Dissipation (Abs): 29 W

Capable of handling high power levels without overheating.

Package Style (Meter): FLANGE MOUNT

Allows for easy mounting and secure attachment to PCBs or heat sinks.

Minimum DC Current Gain (hFE): 20

Ensures consistent amplification performance across a range of operating conditions.

Maximum Operating Temperature: 200 °C

Can withstand high-temperature environments without performance degradation.

Maximum Collector-Base Capacitance: 24 pF

Low capacitance ensures minimal signal distortion and smooth amplification.

Maximum Collector-Emitter Voltage: 25 V

Suitable for low-voltage applications where precision amplification is required.

Transistor Element Material: SILICON

Provides reliability, stability, and consistent performance over time.

Maximum Collector Current (IC): 2.5 A

Capable of handling moderate to high current levels, making it versatile for various applications.

Terminal Finish: NICKEL

Corrosion-resistant finish for long-term reliability and performance.

Terminal Position: DUAL

Offers multiple connection options and flexibility in circuit design.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) SD1423 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

24 pF

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

20

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDFM-F6

No. of Elements:

1

No. of Terminals:

6

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

NICKEL

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

SD1423 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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