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SD1414-12

STMicroelectronics

SD1414-12 by STMicroelectronics

SD1414-12 by STMicroelectronics is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 150W, operates at up to 200 °C, and supports ultra-high frequency bands. Its flat terminal design allows for easy surface mounting.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,862 parts In-Stock

1+ parts

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2,862

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Vyrian

USA . 1,989 parts In-Stock

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1,989

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Anansix

USA . 1,128 parts In-Stock

1+ parts

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1,128

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 403 parts In-Stock

1+ parts

$0.483

100+ parts

-

1k+ parts

$0.435

10k+ parts

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403

$0.483

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$0.435

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MKK Technologies

India . 292 parts In-Stock

1+ parts

$0.908

100+ parts

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292

$0.908

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DigiPath Technology Company

USA . 292 parts In-Stock

1+ parts

$0.908

100+ parts

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292

$0.908

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Parana Technologies

USA . 1,940 parts In-Stock

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$0.578

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1,940

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$0.578

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Corphita

USA . 275 parts In-Stock

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275

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Overview

Unlock unparalleled performance with the SD1414-12 from STMicroelectronics, a leader in innovative semiconductor solutions. This NPN RF Power BJT excels in amplifier applications, delivering robust power and efficiency in ultra-high frequency environments. Designed for reliability and resilience, it thrives even in extreme conditions, ensuring your projects run smoothly. Experience superior quality and trust the expertise of STMicroelectronics to elevate your designs!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and protection against environmental factors, making the transistor reliable in various applications.

Polarity or Channel Type: NPN

The NPN configuration is ideal for amplification and switching applications, providing versatility in circuit design.

Configuration: SINGLE

A single configuration simplifies circuit designs, allowing for easy integration and reduced complexity.

Transistor Application: AMPLIFIER

Designed for amplification, this transistor effectively enhances signal strength, making it suitable for audio and RF applications.

Surface Mount: YES

Surface mount technology allows for compact design and facilitates automated assembly, enhancing manufacturing efficiency.

Package Shape: RECTANGULAR

Rectangular packaging optimizes space on printed circuit boards (PCBs), allowing for higher component density.

Terminal Form: FLAT

Flat terminals provide ease of soldering and better thermal conductivity, ensuring efficient operation.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Operating in the UHF band enables high-speed communication and makes it suitable for wireless applications.

No. of Terminals: 6

With six terminals, this transistor offers flexible connections for various circuit configurations and improved functionality.

Maximum Power Dissipation (Abs): 150 W

A maximum power dissipation of 150 W allows for handling higher power levels, making it suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

Flange mount style enhances stability and heat dissipation in high-power environments, ensuring reliable performance.

Minimum DC Current Gain (hFE): 20

A minimum gain of 20 ensures adequate amplification capability, making it effective for various audio and RF circuits.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature, this transistor performs reliably in harsh conditions without degradation.

Maximum Collector-Emitter Voltage: 18 V

An 18 V voltage rating is suitable for a wide range of applications, providing a good balance between performance and safety.

Transistor Element Material: SILICON

Silicon as the material offers excellent electrical properties and thermal stability, ensuring reliable operation.

Maximum Collector Current (IC): 9 A

Supporting up to 9 A of collector current, this transistor can drive high loads, making it ideal for various high-power applications.

Terminal Position: DUAL

Dual terminal positioning facilitates better circuit layout options and enhances design flexibility.

Case Connection: ISOLATED

Isolated case connections reduce the risk of short circuits, enhancing safety and reliability in applications.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) SD1414-12 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

9 A

Maximum Collector-Emitter Voltage:

18 V

Configuration:

Minimum DC Current Gain (hFE):

20

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDFM-F6

No. of Elements:

1

No. of Terminals:

6

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

SD1414-12 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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