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TH430

STMicroelectronics

TH430 by STMicroelectronics

STMicroelectronics TH430 is a NPN RF BJT with 55V VCEO, 40A IC, and 290W Ptot. Ideal for high-frequency amplifier applications due to its 360pF Ccb, hFE of 15, and operating temp up to 200 °C. Features flat terminals in a round plastic package suitable for surface mount assembly.

Median Price

$87.276

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,847 parts In-Stock

1+ parts

$87.276

100+ parts

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10k+ parts

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1,847

$87.276

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Vyrian

USA . 8,633 parts In-Stock

1+ parts

-

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-

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8,633

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Anansix

USA . 113 parts In-Stock

1+ parts

-

100+ parts

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113

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ECAB

Sweden . 3 parts In-Stock

1+ parts

-

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-

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3

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 235 parts In-Stock

1+ parts

$1.409

100+ parts

-

1k+ parts

$1.268

10k+ parts

-

235

$1.409

-

$1.268

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MKK Technologies

India . 1,331 parts In-Stock

1+ parts

$2.650

100+ parts

-

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10k+ parts

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1,331

$2.650

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DigiPath Technology Company

USA . 1,331 parts In-Stock

1+ parts

$2.650

100+ parts

-

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1,331

$2.650

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Corphita

USA . 99 parts In-Stock

1+ parts

$82.683

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99

$82.683

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Parana Technologies

USA . 888 parts In-Stock

1+ parts

-

100+ parts

$1.685

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888

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$1.685

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Overview

Unlock the power of high-frequency amplification with the STMicroelectronics TH430 RF Power BJT. Manufactured by industry leader STMicroelectronics, this NPN transistor offers unparalleled quality and reliability. Ideal for amplifier applications, this single configuration transistor boasts a maximum power dissipation of 290W and a maximum collector current of 40A. With its plastic/epoxy package body material and radial terminal position, the TH430 is designed for seamless integration and optimal performance. Experience superior functionality and value with the TH430 from STMicroelectronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a lightweight and durable package for the transistor.

Polarity or Channel Type: NPN

Allows for easy integration into NPN circuit configurations.

Configuration: SINGLE

Simplifies circuit design and operation with a single transistor configuration.

Transistor Application: AMPLIFIER

Designed specifically for amplification applications, ensuring optimal performance.

Surface Mount: YES

Facilitates easy and compact PCB integration with surface mount capabilities.

Package Shape: ROUND

Streamlined design for efficient mounting and space-saving.

Terminal Form: FLAT

Provides stable and secure connection points for terminals.

Highest Frequency Band: HIGH FREQUENCY BAND

Suitable for high frequency applications, ensuring reliable performance in such scenarios.

No. of Terminals: 4

Offers multiple connection points for versatility in circuit design.

Maximum Power Dissipation (Abs): 290 W

Can handle high power levels without overheating or damage.

Package Style (Meter): FLANGE MOUNT

Allows for secure mounting and heat dissipation in various applications.

Minimum DC Current Gain (hFE): 15

Ensures reliable and consistent performance in amplification circuits.

Maximum Operating Temperature: 200 °C

Can operate efficiently at high temperatures, expanding its potential use cases.

Maximum Collector-Base Capacitance: 360 pF

Low capacitance ensures minimal interference in signal amplification.

Maximum Collector-Emitter Voltage: 55 V

Suitable for medium voltage applications, ensuring safety and performance.

Transistor Element Material: SILICON

Provides reliable and consistent performance characteristics for the transistor.

Maximum Collector Current (IC): 40 A

Capable of handling high currents, making it suitable for power amplification applications.

Terminal Position: RADIAL

Facilitates easy connection and integration in radial circuit layouts.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) TH430 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

360 pF

Maximum Collector-Emitter Voltage:

55 V

Configuration:

Minimum DC Current Gain (hFE):

15

Highest Frequency Band:

HIGH FREQUENCY BAND

JESD-30 Code:

O-PRFM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

TH430 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-842-9864, 5961008429864

NIIN

008429864

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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