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AM0912-080

STMicroelectronics

AM0912-080 by STMicroelectronics

STMicroelectronics' AM0912-080 is a NPN RF BJT transistor with 8.4 dB min power gain, ideal for L Band applications. It has a max power dissipation of 220 W and can handle up to 7 A collector current, suitable for high-power switching operations in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 4,727 parts In-Stock

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Vyrian

USA . 4,451 parts In-Stock

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Anansix

USA . 974 parts In-Stock

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IDEA Electronic Components Group

UK . 2,009 parts In-Stock

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$0.924

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$0.831

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$0.924

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$0.831

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MKK Technologies

India . 1,173 parts In-Stock

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$1.737

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$1.737

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DigiPath Technology Company

USA . 1,173 parts In-Stock

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$1.737

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Corphita

USA . 2,839 parts In-Stock

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Northwest PG Solutions

USA . 1,537 parts In-Stock

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Parana Technologies

USA . 802 parts In-Stock

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$1.104

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Native Components

USA . 679 parts In-Stock

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Overview

Experience superior performance and reliability with the AM0912-080 RF Power BJT from STMicroelectronics. As a trusted manufacturer in the industry, STMicroelectronics delivers top-quality products for a range of applications, including switching. This NPN transistor offers a minimum power gain of 8.4 dB and a maximum power dissipation of 220 W, making it ideal for high-power L Band applications. With its ceramic, metal-sealed co-fired package and flat terminal form, this transistor provides unmatched value and benefits to customers looking for advanced solutions in RF power amplification. Trust STMicroelectronics for cutting-edge technology that meets your needs.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This package body material provides excellent thermal conductivity and durability, ensuring reliable performance in high-power applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile for various applications.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easier to implement in electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and high efficiency in on/off operation.

Surface Mount: YES

With surface-mount capability, this transistor can be easily mounted on printed circuit boards, saving space and reducing assembly time.

Minimum Power Gain (Gp): 8.4 dB

The minimum power gain of 8.4 dB indicates good amplification capabilities, ensuring strong signal output in demanding scenarios.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy placement and orientation in circuit layouts, enhancing installation convenience.

Terminal Form: FLAT

The flat terminal form facilitates soldering and connection to external circuitry, enabling secure and stable connections for optimal performance.

Highest Frequency Band: L BAND

Operating in the L band frequency range, this transistor is suitable for high-frequency applications such as radar, satellite communication, and microwave systems.

No. of Terminals: 2

With only 2 terminals, this transistor offers easy integration into simple circuit designs, reducing complexity and improving overall reliability.

Maximum Power Dissipation (Abs): 220 W

The high maximum power dissipation of 220 W ensures the transistor can handle significant power levels without overheating, making it suitable for high-power applications.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides secure mechanical support and heat dissipation, enhancing the transistor's reliability and longevity.

Minimum DC Current Gain (hFE): 20

With a minimum DC current gain of 20, this transistor offers consistent and stable amplification characteristics, ensuring reliable performance in circuit operation.

Maximum Operating Temperature: 250 °C

The high maximum operating temperature of 250 °C allows the transistor to withstand elevated temperature environments, enhancing its durability and reliability.

Transistor Element Material: SILICON

Utilizing silicon as the transistor element material results in high performance, low power consumption, and reliable operation, making this product a superior choice for various applications.

Maximum Collector Current (IC): 7 A

With a maximum collector current of 7 A, this transistor can handle high current loads, making it suitable for power switching and control applications.

Terminal Position: DUAL

The dual terminal position enhances the transistor's versatility, allowing for flexible and convenient connections to external circuitry for optimal performance.

Case Connection: BASE

The base case connection simplifies the electrical connections and enhances stability, ensuring reliable operation in various circuit configurations.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) AM0912-080 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

BASE

Maximum Collector Current (IC):

7 A

Configuration:

Minimum DC Current Gain (hFE):

20

Highest Frequency Band:

L BAND

JESD-30 Code:

R-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

250 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

8.4 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

AM0912-080 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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