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MAX2602ESA+

Analog Devices

MAX2602ESA+ by Analog Devices

MAX2602ESA+ by Analog Devices is a NPN BJT transistor with 8 terminals, operating at 150°C. It has a max collector-emitter voltage of 15V and can handle a collector current of 1.2A. Ideal for amplifier applications in the ultra-high frequency band due to its small outline package style.

Median Price

$8.695

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

MAX2602ESA+ by Analog Devices
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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Analog Devices Inc

USA . 7,191 parts In-Stock

1+ parts

$7.920

100+ parts

$6.000

1k+ parts

$5.287

10k+ parts

-

7,191

$7.920

$6.000

$5.287

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DigiKey

USA . 140 parts In-Stock

1+ parts

$9.470

100+ parts

$7.187

1k+ parts

$6.340

10k+ parts

-

140

$9.470

$7.187

$6.340

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$1.753

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50

$1.753

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Digiode

USA . 746 parts In-Stock

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$7.695

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746

$7.695

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Vyrian

USA . 2,294 parts In-Stock

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$8.100

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2,294

$8.100

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Anansix

USA . 2,722 parts In-Stock

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2,722

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Euro-Tech

UK . 256 parts In-Stock

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256

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Prism Electronics

USA . 44 parts In-Stock

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44

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ABC Electronics Ltd.

UK . 42 parts In-Stock

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42

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Inventory MP

USA . 21 parts In-Stock

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21

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Bristol Electronics

USA . 21 parts In-Stock

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Resion

USA . 2 parts In-Stock

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Distributors (Availability)

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MARBEL Systems

Belgium . 34,485 parts In-Stock

1+ parts

$1.218

100+ parts

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34,485

$1.218

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Texas Native Microelectronics

USA . 2,863 parts In-Stock

1+ parts

$1.400

100+ parts

$1.344

1k+ parts

$1.302

10k+ parts

$1.232

2,863

$1.400

$1.344

$1.302

$1.232

Kenton Components

USA . 50 parts In-Stock

1+ parts

$1.680

100+ parts

-

1k+ parts

-

10k+ parts

$1.478

50

$1.680

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-

$1.478

Qasali Group International

UK . 58 parts In-Stock

1+ parts

$3.780

100+ parts

-

1k+ parts

$3.515

10k+ parts

$3.326

58

$3.780

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$3.515

$3.326

Corphita

USA . 2,912 parts In-Stock

1+ parts

$7.290

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2,912

$7.290

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Semicontronic

India . 72 parts In-Stock

1+ parts

$17.570

100+ parts

$17.131

1k+ parts

$17.043

10k+ parts

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72

$17.570

$17.131

$17.043

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Microchip USA

USA . 6,522 parts In-Stock

1+ parts

$19.516

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6,522

$19.516

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QUARKTWIN TECHNOLOGY LTD

USA . 15,994 parts In-Stock

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15,994

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Lixinc

USA . 11,796 parts In-Stock

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11,796

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Glotronic Ltd.

UK . 2,005 parts In-Stock

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2,005

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Overview

Enhance the performance of your RF power amplifiers with the MAX2602ESA+ by Analog Devices. Known for their top-notch quality and reliability, Analog Devices delivers cutting-edge technology in the realm of RF Power Bipolar Junction Transistors. From single with a built-in diode configuration to ultra-high frequency band capabilities, this transistor is ideal for amplifier applications. With a maximum collector-emitter voltage of 15V and a DC current gain of 100, this transistor offers exceptional value and benefits to customers looking to elevate their RF power systems. Trust Analog Devices for superior products that deliver results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various environments and applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode enhances the functionality of the transistor, allowing for more versatile applications in amplifier circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification circuits.

Surface Mount: YES

Can be easily mounted on circuit boards, making it convenient for manufacturing and assembly processes.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement and mounting on circuit boards, optimizing space utilization.

Terminal Form: GULL WING

Gull wing terminals provide secure connections and ease of soldering during installation.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Suitable for high-frequency applications, ensuring reliable performance in ultra-high frequency circuits.

No. of Terminals: 8

Provides multiple connection points for versatile circuit integration and compatibility with various electronic systems.

Package Style (Meter): SMALL OUTLINE

Compact size and small outline make it suitable for space-constrained applications and designs.

Minimum DC Current Gain (hFE): 100

High DC current gain ensures efficient and reliable amplification of signals in the circuit.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, suitable for demanding industrial environments.

Maximum Collector-Emitter Voltage: 15 V

With a high collector-emitter voltage rating, the transistor can handle higher voltage levels within the circuit.

Transistor Element Material: SILICON

Silicon material provides excellent conductivity and reliability, ensuring stable performance over time.

Maximum Collector Current (IC): 1.2 A

Supports high collector current, making it suitable for applications requiring higher current handling capabilities.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish offers corrosion resistance and ensures long-term reliability in various operating conditions.

Terminal Position: DUAL

Dual terminal configuration allows for easy and secure connections, enhancing the overall reliability of the transistor.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for a specified duration, ensuring proper soldering and assembly processes.

Peak Reflow Temperature °C: 260

Capable of withstanding high peak reflow temperatures during the soldering process, ensuring secure and reliable connections.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) MAX2602ESA+ attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Analog Devices

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

15 V

Minimum DC Current Gain (hFE):

100

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MAX2602ESA+ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

Category top products 20

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