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SD4100

STMicroelectronics

SD4100 by STMicroelectronics

SD4100 by STMicroelectronics is an NPN RF power BJT designed for amplifier applications, featuring a max power dissipation of 220 W and operating temp up to 200 °C. It supports ultra-high frequency bands with a collector current of 16 A. Its ceramic, metal-sealed package ensures durability in demanding environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,886 parts In-Stock

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3,886

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Vyrian

USA . 3,359 parts In-Stock

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3,359

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Anansix

USA . 1,141 parts In-Stock

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1,141

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ECAB

Sweden . 2 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 218 parts In-Stock

1+ parts

$0.934

100+ parts

-

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$0.840

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218

$0.934

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$0.840

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MKK Technologies

India . 358 parts In-Stock

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$1.756

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358

$1.756

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DigiPath Technology Company

USA . 358 parts In-Stock

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$1.756

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358

$1.756

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Corphita

USA . 2,823 parts In-Stock

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2,823

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Parana Technologies

USA . 915 parts In-Stock

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$1.116

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915

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Overview

Unlock unparalleled performance with the SD4100 from STMicroelectronics, a leader in cutting-edge semiconductor solutions. Designed for applications in RF amplification, this robust NPN transistor delivers exceptional reliability and efficiency, making it ideal for ultra-high frequency operations. Its premium ceramic and metal-sealed package enhances durability while ensuring optimal thermal management. Elevate your projects with the powerful capabilities of the SD4100, where quality meets innovation!

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The durable ceramic and metal-sealed co-fired package ensures reliability and protection against environmental factors, making the transistor suitable for demanding applications.

Polarity or Channel Type: NPN

NPN configuration allows for better control of current flow and is ideal for amplification applications, enhancing its versatility.

Configuration: SINGLE

A single configuration simplifies design and integration in circuits, while maintaining high performance.

Transistor Application: AMPLIFIER

Designed for amplifier applications, this transistor is optimized for signal amplification, making it ideal for audio and radio frequency applications.

Surface Mount: YES

Surface mount capability allows for efficient use of space on PCBs and simplifies automated assembly processes, improving production efficiency.

Package Shape: RECTANGULAR

The rectangular package shape offers a compact design, which is advantageous for space-constrained applications.

Terminal Form: FLAT

Flat terminals provide a reliable surface for electrical connections, ensuring stable performance in high-power applications.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Operating in the ultra-high frequency band enables the transistor to be utilized in advanced communication systems, enhancing signal clarity and range.

No. of Terminals: 4

Four terminals offer versatile connection options, contributing to flexible circuit designs and improved performance.

Maximum Power Dissipation (Abs): 220 W

With a maximum power dissipation of 220 W, this transistor can handle significant power loads, making it suitable for high-performance applications.

Package Style (Meter): FLANGE MOUNT

Flange mount design allows for secure attachment to heatsinks or other circuit components, enhancing thermal management and reliability.

Minimum DC Current Gain (hFE): 25

A minimum DC current gain of 25 ensures adequate amplification capabilities, making it an efficient choice for various amplification tasks.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature of 200 °C, this transistor can operate reliably in hotter environments, expanding its application scope.

Maximum Collector-Emitter Voltage: 32 V

The 32 V maximum collector-emitter voltage allows for operation in a variety of circuit configurations while maintaining safe performance levels.

Transistor Element Material: SILICON

Silicon as the transistor element material offers excellent electronic properties and thermal stability, ensuring reliable performance.

Maximum Collector Current (IC): 16 A

With a maximum collector current of 16 A, it is suitable for high-current applications, providing robustness in demanding environments.

Terminal Finish: NICKEL

Nickel terminal finish improves corrosion resistance and ensures reliable electrical contact, enhancing long-term performance.

Terminal Position: DUAL

Dual terminal positioning allows for effective current handling and simplifies circuit design, improving overall performance.

Case Connection: EMITTER

Emitter case connection ensures efficient heat dissipation, contributing to the longevity and reliability of the transistor in high-power applications.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) SD4100 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

EMITTER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

32 V

Configuration:

Minimum DC Current Gain (hFE):

25

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-CDFM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

NICKEL

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

SD4100 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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