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PZ2024B10U

NXP Semiconductors

PZ2024B10U by NXP Semiconductors

PZ2024B10U by NXP is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 27W, operates up to 200 °C, and supports S-band frequencies. Its ceramic, metal-sealed package ensures durability in demanding environments.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Vyrian

USA . 1,212 parts In-Stock

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Anansix

USA . 709 parts In-Stock

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Digiode

USA . 378 parts In-Stock

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Freelance Electronics

USA . 7 parts In-Stock

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One Stop Electronics

USA . 274 parts In-Stock

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$36.050

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Corphita

USA . 2,548 parts In-Stock

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UNI Independent Distributors

Spain . 766 parts In-Stock

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Overview

Elevate your RF applications with the PZ2024B10U from NXP Semiconductors, a leader in innovation and quality. This high-performance NPN power BJT excels as an amplifier, delivering exceptional power gain and reliability even in extreme environments. With its robust ceramic and metal-sealed package, it ensures durability and efficiency, making it ideal for communication systems and industrial applications. Trust in NXP’s expertise to enhance your projects with unparalleled performance and value.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The durable ceramic and metal-sealed cofired package enhances thermal performance and reliability, making the device suitable for high-power applications.

Polarity or Channel Type: NPN

NPN transistors are widely used in amplification and switching, providing versatility in various electronic circuits.

Configuration: SINGLE

A single configuration simplifies the design and integration into electronic circuits, ideal for efficient amplification.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this transistor is optimized for boosting signal strength in radio frequency applications.

Surface Mount: YES

Surface mount capability allows for compact designs, making it easier to integrate into modern circuit layouts.

Minimum Power Gain (Gp): 5.6 dB

A minimum power gain of 5.6 dB signifies robust amplification performance, suitable for demanding applications.

Package Shape: RECTANGULAR

The rectangular shape facilitates efficient layout on PCBs, optimizing space and enhancing assembly.

Terminal Form: FLAT

Flat terminals promote better thermal dissipation and soldering reliability during assembly.

Highest Frequency Band: S BAND

Suitable for S band applications, this transistor can effectively operate in critical communication and radar systems.

No. of Terminals: 2

The simple two-terminal design simplifies connections, reducing potential points of failure in circuits.

Maximum Power Dissipation (Abs): 27 W

A power dissipation capability of 27 W allows it to handle significant thermal loads, improving reliability in high-power scenarios.

Package Style (Meter): FLANGE MOUNT

Flange mount style provides a robust attachment option, ensuring stable performance in various operational environments.

Maximum Power Dissipation Ambient: 27 W

The ability to dissipate 27 W under ambient conditions ensures consistent performance without overheating.

Maximum Operating Temperature: 200 °C

With a maximum operating temperature of 200 °C, this transistor is resilient, making it suitable for harsh environments.

Maximum Collector-Emitter Voltage: 15 V

A collector-emitter voltage rating of 15 V supports safe operation under standard RF conditions.

Transistor Element Material: SILICON

Silicon as the material choice enhances performance stability and efficiency, commonly preferred in RF applications.

Maximum Collector Current (IC): 2 A

Handling up to 2 A collector current ensures reliable operation under various load conditions.

Terminal Position: DUAL

Dual terminal positioning offers greater flexibility for circuit layout and design, accommodating diverse implementation needs.

Case Connection: BASE

Base connection design allows for efficient signal input, promoting improved overall circuit performance.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) PZ2024B10U attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

BASE

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Highest Frequency Band:

S BAND

JESD-30 Code:

R-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

27 W

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

5.6 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

PZ2024B10U Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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