Loading...

2SC2879A

Toshiba

2SC2879A by Toshiba

The Toshiba 2SC2879A is a NPN RF Power BJT with a max power dissipation of 250W, ideal for amplifier applications in the high-frequency band. It has a max collector-emitter voltage of 18V, collector current of 25A, and min DC current gain of 10. This transistor comes in a ceramic-metal-sealed co-fired package with flange mount style and radial terminal position.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

VNN

France . 5,105 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,105

-

-

-

-

Vyrian

USA . 1,636 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,636

-

-

-

-

Nova Conductors

Japan . 900 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

900

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 60 parts In-Stock

1+ parts

$0.587

100+ parts

$0.587

1k+ parts

$0.587

10k+ parts

-

60

$0.587

$0.587

$0.587

-

Corohmni

South Africa . 656 parts In-Stock

1+ parts

$1.628

100+ parts

-

1k+ parts

-

10k+ parts

-

656

$1.628

-

-

-

AZTECH Wire

Italy . 765 parts In-Stock

1+ parts

$16.854

100+ parts

-

1k+ parts

-

10k+ parts

-

765

$16.854

-

-

-

Ampacity Inc.

Singapore . 451 parts In-Stock

1+ parts

$30.050

100+ parts

-

1k+ parts

-

10k+ parts

-

451

$30.050

-

-

-

Continental Prestige Electronics

USA . 4,718 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,718

-

-

-

-

Argo Parts USA

USA . 2,050 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,050

-

-

-

-

Bastille Electronics

Australia . 800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

800

-

-

-

-

Perfect Parts

USA . 560 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

560

-

-

-

-

Overview

Boost your amplifier's performance with the 2SC2879A by Toshiba, a top-notch RF power bipolar junction transistor that delivers unparalleled quality and reliability. Manufactured by Toshiba, a trusted name in the industry, this transistor is perfect for high-frequency band applications, offering a maximum power dissipation of 250W and a maximum collector current of 25A. With its ceramic, metal-sealed cofired package body material and NPN polarity, the 2SC2879A is designed for maximum efficiency and durability. Upgrade your amplifier today and experience the superior value and benefits that only Toshiba can provide.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

Provides high reliability and durability, making it suitable for long-term use in various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits, ensuring reliable performance in amplification applications.

Configuration: SINGLE

Simplified design and ease of integration in circuits, making it a cost-effective choice for amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance and efficiency in signal amplification.

Surface Mount: YES

Enables easy and convenient mounting on circuit boards, saving valuable space and simplifying the assembly process.

Package Shape: ROUND

Compact and space-saving design, suitable for applications where size constraints are a concern.

Terminal Form: FLAT

Facilitates secure and reliable connection with other components in the circuit, ensuring stable operation over time.

No. of Terminals: 4

Provides flexibility in circuit connections and configurations, allowing for versatile use in various amplifier designs.

Maximum Power Dissipation (Abs): 250 W

High power handling capacity, enabling the transistor to withstand heavy loads and deliver consistent performance under demanding conditions.

Package Style (Meter): FLANGE MOUNT

Facilitates easy installation and secure mounting in systems, ensuring mechanical stability and efficient heat dissipation.

Minimum DC Current Gain (hFE): 10

Ensures reliable amplification of input signals with consistent gain, improving the overall performance of the amplifier circuit.

Maximum Operating Temperature: 175 °C

Can operate effectively at elevated temperatures without compromising performance, suitable for applications that involve high temperature environments.

Maximum Collector-Emitter Voltage: 18 V

Supports a wide range of voltage requirements in amplifier circuits, ensuring compatibility with various system specifications.

Transistor Element Material: SILICON

Silicon-based construction offers high efficiency and reliability, making it a preferred choice for amplifier applications where performance and durability are key factors.

Maximum Collector Current (IC): 25 A

Ability to handle high current levels, making it suitable for power amplifier applications that require robust performance capabilities.

Terminal Position: RADIAL

Facilitates easy and convenient soldering or connection to the circuit, ensuring a reliable electrical interface for seamless integration.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) 2SC2879A attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

18 V

Configuration:

Minimum DC Current Gain (hFE):

10

Highest Frequency Band:

HIGH FREQUENCY BAND

JESD-30 Code:

O-CRFM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

175 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2SC2879A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20